Combined heat and power and campus carbon footprint reduction

Gemstone Team Cogeneration Technology

COMPREHENSIVE ELECTRICAL/OPTICAL/THERMAL CHARACTERIZATIONS OF HIGH POWER LIGHT EMITTING DIODES AND LASER DIODES

Thermal characterizations of high power light emitting diodes (LEDs) and laser diodes (LDs) are one of the most critical issues to achieve optimal performance such as center wavelength, spectrum, power efficiency, and reliability. Unique electrical/optical/thermal characterizations are proposed to analyze the complex thermal issues of high power LEDs and LDs. First, an advanced inverse approach, based on the transient junction temperature behavior, is proposed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power LEDs. A hybrid analytical/numerical model is utilized to determine an approximate transient junction temperature behavior, which is governed predominantly by the resistance of the DTI. Then, an accurate value of the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. Secondly, the effect of junction temperature on heat dissipation of high power LEDs is investigated. The theoretical aspect of junction temperature dependency of two major parameters – the forward voltage and the radiant flux – on heat dissipation is reviewed. Actual measurements of the heat dissipation over a wide range of junction temperatures are followed to quantify the effect of the parameters using commercially available LEDs. An empirical model of heat dissipation is proposed for applications in practice. Finally, a hybrid experimental/numerical method is proposed to predict the junction temperature distribution of a high power LD bar. A commercial water-cooled LD bar is used to present the proposed method. A unique experimental setup is developed and implemented to measure the average junction temperatures of the LD bar. After measuring the heat dissipation of the LD bar, the effective heat transfer coefficient of the cooling system is determined inversely. The characterized properties are used to predict the junction temperature distribution over the LD bar under high operating currents. The results are presented in conjunction with the wall-plug efficiency and the center wavelength shift.

A Thermal Management Solution for Compact Power Converters

Regulated Transformer Rectifier Units contain several power electronic boards to facilitate AC to DC power conversion. As these units become smaller, the number of devices on each board increases while their distance from each other decreases, making active cooling essential to maintaining reliable operation. Although it is widely accepted that liquid is a far superior heat transfer medium to air, the latter is still capable of yielding low device operating temperatures with proper heat sink and airflow design. The purpose of this study is to describe the models and methods used to design and build the thermal management system for one of the power electronic boards in a compact, high power regulated transformer rectifier unit. Maximum device temperature, available pressure drop and manufacturability were assessed when selecting the final design for testing. Once constructed, the thermal management system’s performance was experimentally verified at three different power levels.

Thermal Tracking and Estimation for Microprocessors

Due to increasing integration density and operating frequency of today's high performance processors, the temperature of a typical chip can easily exceed 100 degrees Celsius. However, the runtime thermal state of a chip is very hard to predict and manage due to the random nature in computing workloads, as well as the process, voltage and ambient temperature variability (together called PVT variability). The uneven nature (both in time and space) of the heat dissipation of the chip could lead to severe reliability issues and error-prone chip behavior (e.g. timing errors). Many dynamic power/thermal management techniques have been proposed to address this issue such as dynamic voltage and frequency scaling (DVFS), clock gating and etc. However, most of such techniques require accurate knowledge of the runtime thermal state of the chip to make efficient and effective control decisions. In this work we address the problem of tracking and managing the temperature of microprocessors which include the following sub-problems: (1) how to design an efficient sensor-based thermal tracking system on a given design that could provide accurate real-time temperature feedback; (2) what statistical techniques could be used to estimate the full-chip thermal profile based on very limited (and possibly noise-corrupted) sensor observations; (3) how do we adapt to changes in the underlying system's behavior, since such changes could impact the accuracy of our thermal estimation. The thermal tracking methodology proposed in this work is enabled by on-chip sensors which are already implemented in many modern processors. We first investigate the underlying relationship between heat distribution and power consumption, then we introduce an accurate thermal model for the chip system. Based on this model, we characterize the temperature correlation that exists among different chip modules and explore statistical approaches (such as those based on Kalman filter) that could utilize such correlation to estimate the accurate chip-level thermal profiles in real time. Such estimation is performed based on limited sensor information because sensors are usually resource constrained and noise-corrupted. We also took a further step to extend the standard Kalman filter approach to account for (1) nonlinear effects such as leakage-temperature interdependency and (2) varying statistical characteristics in the underlying system model. The proposed thermal tracking infrastructure and estimation algorithms could consistently generate accurate thermal estimates even when the system is switching among workloads that have very distinct characteristics. Through experiments, our approaches have demonstrated promising results with much higher accuracy compared to existing approaches. Such results can be used to ensure thermal reliability and improve the effectiveness of dynamic thermal management techniques.

Physical Design Methodologies for Low Power and Reliable 3D ICs

As the semiconductor industry struggles to maintain its momentum down the path following the Moore's Law, three dimensional integrated circuit (3D IC) technology has emerged as a promising solution to achieve higher integration density, better performance, and lower power consumption. However, despite its significant improvement in electrical performance, 3D IC presents several serious physical design challenges. In this dissertation, we investigate physical design methodologies for 3D ICs with primary focus on two areas: low power 3D clock tree design, and reliability degradation modeling and management. Clock trees are essential parts for digital system which dissipate a large amount of power due to high capacitive loads. The majority of existing 3D clock tree designs focus on minimizing the total wire length, which produces sub-optimal results for power optimization. In this dissertation, we formulate a 3D clock tree design flow which directly optimizes for clock power. Besides, we also investigate the design methodology for clock gating a 3D clock tree, which uses shutdown gates to selectively turn off unnecessary clock activities. Different from the common assumption in 2D ICs that shutdown gates are cheap thus can be applied at every clock node, shutdown gates in 3D ICs introduce additional control TSVs, which compete with clock TSVs for placement resources. We explore the design methodologies to produce the optimal allocation and placement for clock and control TSVs so that the clock power is minimized. We show that the proposed synthesis flow saves significant clock power while accounting for available TSV placement area. Vertical integration also brings new reliability challenges including TSV's electromigration (EM) and several other reliability loss mechanisms caused by TSV-induced stress. These reliability loss models involve complex inter-dependencies between electrical and thermal conditions, which have not been investigated in the past. In this dissertation we set up an electrical/thermal/reliability co-simulation framework to capture the transient of reliability loss in 3D ICs. We further derive and validate an analytical reliability objective function that can be integrated into the 3D placement design flow. The reliability aware placement scheme enables co-design and co-optimization of both the electrical and reliability property, thus improves both the circuit's performance and its lifetime. Our electrical/reliability co-design scheme avoids unnecessary design cycles or application of ad-hoc fixes that lead to sub-optimal performance. Vertical integration also enables stacking DRAM on top of CPU, providing high bandwidth and short latency. However, non-uniform voltage fluctuation and local thermal hotspot in CPU layers are coupled into DRAM layers, causing a non-uniform bit-cell leakage (thereby bit flip) distribution. We propose a performance-power-resilience simulation framework to capture DRAM soft error in 3D multi-core CPU systems. In addition, a dynamic resilience management (DRM) scheme is investigated, which adaptively tunes CPU's operating points to adjust DRAM's voltage noise and thermal condition during runtime. The DRM uses dynamic frequency scaling to achieve a resilience borrow-in strategy, which effectively enhances DRAM's resilience without sacrificing performance. The proposed physical design methodologies should act as important building blocks for 3D ICs and push 3D ICs toward mainstream acceptance in the near future.