4 resultados para anisotropia

em Diposit Digital de la UB - Universidade de Barcelona


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ches. The critical point is characterized by a set of critical exponents, which are consistent with the universal values proposed from the study of other simpler models.

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In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a sizable anisotropy in the infrared spectra, with minor effects in the Raman data too. This fact is not trivial at all, since the crystal structure corresponds to a moderate distortion of the fluorite symmetry. Our analysis is carried out on small single crystals grown by flux transport, through polarization-resolved far-infrared reflectivity and Raman measurements. Their interpretation has been obtained by means of the simulated spectra with tight-binding molecular dynamics.

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The elastic moduli of vortex crystals in anisotropic superconductors are frequently involved in the investigation of their phase diagram and transport properties. We provide a detailed analysis of the harmonic eigenvalues (normal modes) of the vortex lattice for general values of the magnetic field strength, going beyond the elastic continuum regime. The detailed behavior of these wave-vector-dependent eigenvalues within the Brillouin zone (BZ), is compared with several frequently used approximations that we also recalculate. Throughout the BZ, transverse modes are less costly than their longitudinal counterparts, and there is an angular dependence which becomes more marked close to the zone boundary. Based on these results, we propose an analytic correction to the nonlocal continuum formulas which fits quite well the numerical behavior of the eigenvalues in the London regime. We use this approximate expression to calculate thermal fluctuations and the full melting line (according to Lindeman's criterion) for various values of the anisotropy parameter.

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High-sensitivity electron paramagnetic resonance experiments have been carried out in fresh and stressed Mn12 acetate single crystals for frequencies ranging from 40 GHz up to 110 GHz. The high number of crystal dislocations formed in the stressing process introduces a E(Sx2-Sy2) transverse anisotropy term in the spin Hamiltonian. From the behavior of the resonant absorptions on the applied transverse magnetic field we have obtained an average value for E=22 mK, corresponding to a concentration of dislocations per unit cell of c=10-3.