5 resultados para Substrate temperatures
em Diposit Digital de la UB - Universidade de Barcelona
Resumo:
Bubble formation in solutions of 3He and 4He is studied within a density-functional approach. In particular, the temperature dependence of the cavitation pressure for different 3He concentrations is calculated at low temperatures and compared to that of pure 4He. The presence of Andreev states lowers the surface tension and, consequently, nucleation barriers are drastically reduced. This fact means that even at low 3He concentrations the cavitation process takes place at higher pressures than the spinodal pressure, which is not the case for pure 4He.
Resumo:
Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.