Optical Components for WDM Lightwave Networks

Recently, there has been growing interest in developing optical fiber networks to support the increasing bandwidth demands of multimedia applications, such as video conferencing and World Wide Web browsing. One technique for accessing the huge bandwidth available in an optical fiber is wavelength-division multiplexing (WDM). Under WDM, the optical fiber bandwidth is divided into a number of nonoverlapping wavelength bands, each of which may be accessed at peak electronic rates by an end user. By utilizing WDM in optical networks, we can achieve link capacities on the order of 50 THz. The success of WDM networks depends heavily on the available optical device technology. This paper is intended as a tutorial on some of the optical device issues in WDM networks. It discusses the basic principles of optical transmission in fiber and reviews the current state of the art in optical device technology. It introduces some of the basic components in WDM networks, discusses various implementations of these components, and provides insights into their capabilities and limitations. Then, this paper demonstrates how various optical components can be incorporated into WDM optical networks for both local and wide-area applications. Last, the paper provides a brief review of experimental WDM networks that have been implemented.

Dynamic Routing in Translucent WDM Optical Networks

Translucent WDM optical networks use sparse placement of regenerators to overcome the impairments and wavelength contention introduced by fully transparent networks, and achieve a performance close to fully opaque networks with much less cost. Our previous study proved the feasibility of translucent networks using sparse regeneration technique. We addressed the placement of regenerators based on static schemes allowing only fixed number of regenerators at fixed locations. This paper furthers the study by proposing a suite of dynamical routing schemes. Dynamic allocation, advertisement and discovery of regeneration resources are proposed to support sharing transmitters and receivers between regeneration and access functions. This study follows the current trend in optical networking industry by utilizing extension of IP control protocols. Dynamic routing algorithms, aware of current regeneration resources and link states, are designed to smartly route the connection requests under quality constraints. A hierarchical network model, supported by the MPLS-based control plane, is also proposed to provide scalability. Experiments show that network performance is improved without placement of extra regenerators.

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.