Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Morphology and Deformation Mechanisms and Tensile Properties of Tetrafunctional Multigraft Copolymers

Morphology and deformation mechanisms and tensile properties of tetrafunctional multigraft (MG) polystrene-g-polyisoprene (PS-g-PI) copolymers were investigated dependent on PS volume fraction and number of branch points. The combination of various methods such as TEM, real time synchrotron SAXS, rheo-optical FTIR, and tensile tests provides comprehensive information at different dimension levels.TEMand SAXS studies revealed that the number of branch points has no obvious influence on the microphase-separated morphology of tetrafunction MG copolymers with 16 wt % PS. But for tetrafunctional MG copolymers with 25 wt % PS, the size and integrity of PS microdomains decrease with increasing number of branch point. The deformation mechanisms ofMGcopolymers are highly related to the morphology. Dependent on the microphase-separated morphology and integrity of the PS phase, the strain-induced orientation of the PS phase is at different size scales. Polarized FT-IR spectra analysis reveals that, for all investigated MG copolymers, the PI phase shows strain-induced orientation along SD at molecular scale. The proportion of the PI block effectively bridging PS domains controls the tensile properties of the MGcopolymers at high strain, while the stress-strain behavior in the low-mediate strain region is controlled by the continuity of PS microdomains. The special molecular architecture, which leads to the higher effective functionality of PS domains and the higher possibility for an individual PI backbone being tethered with a large number of PS domains, is proposed to be the origin of the superelasticity for MG copolymers.