Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Impact of Bottom Flange Confinement Reinforcement on Performance of Prestressed Concrete Bridge Girders

For many years AASHTO provided no recommendation to state DOT’s on bottom flange confinement reinforcement for their bridge superstructures. The 1996 edition of AASHTO Standard Specification for Highway Bridges stated that nominal reinforcement be placed to enclose the prestressing steel from the end of the girder for at least a distance equal to the girder’s height. A few years later the 2004 AASHTO LRFD Bridge Design Specification changed the distance over which the confinement was to be distributed from 1.0h to 1.5h, and gave minimum requirements for the amount of steel to be used, No.3 bars, and their maximum spacing, not to exceed 6”. Research was undertaken to study what impact, if any, confinement reinforcement has on the performance of prestressed concrete bridge girders. Of particular interest was the effect confinement had on the transfer length, development length, and vertical shear capacity of the fore mentioned members. First, an analytical investigation was performed on the subject, and then an experimental investigation followed which consisted of designing, fabricating, and testing eight tee-girders and three NU1100 girders with particular attention paid to the amount and distribution of confinement reinforcement placed at the end of each girder. The results of the study show: 1) neither the amount or distribution of confinement reinforcement had a significant effect on the initial or final transfer length of the prestress strands; 2) at the AASHTO calculated development length, no significant impact from confinement was found on either the nominal flexural capacity of bridge girders or bond capacity of the prestressing steel; 3) the effects from varied confinement reinforcement on the shear resistance of girders tested was negligible, however, distribution of confinement did show to have an impact on the prestressed strands’ bond capacity; 4) confinement distribution across the entire girder did increase ductility and reduced cracking under extreme loading conditions.