Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition

Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n-type Si(111) via plasma-enhanced chemical-vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV. ©1996 American Institute of Physics.

Minimizing the Number of Optical Amplifiers Needed to Support a Multi-Wavelength Optical LAN/MAN

Optical networks based on passive star couplers and employing wavelength-division multiplexing (WDhf) have been proposed for deployment in local and metropolitan areas. Amplifiers are required in such networks to compensate for the power losses due to splitting and attenuation. However, an optical amplifier has constraints on the maximum gain and the maximum output power it can supply; thus optical amplifier placement becomes a challenging problem. The general problem of minimizing the total amplifier count, subject to the device constraints, is a mixed-integer non-linear problem. Previous studies have attacked the amplifier placement problem by adding the “artificial” constraint that all wavelengths, which are present at a particular point in a fiber, be at the same power level. In this paper, we present a method to solve the minimum amplifier- placement problem while avoiding the equally powered- wavelength constraint. We demonstrate that, by allowing signals to operate at different power levels, our method can reduce the number of amplifiers required in several small to medium-sized networks.