Optical Components for WDM Lightwave Networks

Recently, there has been growing interest in developing optical fiber networks to support the increasing bandwidth demands of multimedia applications, such as video conferencing and World Wide Web browsing. One technique for accessing the huge bandwidth available in an optical fiber is wavelength-division multiplexing (WDM). Under WDM, the optical fiber bandwidth is divided into a number of nonoverlapping wavelength bands, each of which may be accessed at peak electronic rates by an end user. By utilizing WDM in optical networks, we can achieve link capacities on the order of 50 THz. The success of WDM networks depends heavily on the available optical device technology. This paper is intended as a tutorial on some of the optical device issues in WDM networks. It discusses the basic principles of optical transmission in fiber and reviews the current state of the art in optical device technology. It introduces some of the basic components in WDM networks, discusses various implementations of these components, and provides insights into their capabilities and limitations. Then, this paper demonstrates how various optical components can be incorporated into WDM optical networks for both local and wide-area applications. Last, the paper provides a brief review of experimental WDM networks that have been implemented.

Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition

Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n-type Si(111) via plasma-enhanced chemical-vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV. ©1996 American Institute of Physics.