Continuous/Cluster-Pinned Recording Media

We propose and theoretically investigate a new class of nanostructured magnetic recording films, cluster-pinned recording media. The films consist of magnetic clusters exchange coupled to a continuous hard layer with perpendicular anisotropy and low coercivity. Our calculations yield the coercivity and the cross-track correlation length as a function of film thickness and pinning density and strength. The mechanism is very similar to the Gaunt–Friedel pinning in bulk magnets, which differs from ordinary strong pinning by the selfconsistent dependence of wall curvature and coercivity on defect concentration. The main difference is the exponent for the coercivity as a function of the pinning strength, which is equal to 2 in the bulk but equal to 3/2 in thin films. The pinning strength is estimated for various regimes, and it is shown that the diminished domain-wall curvature reduces jitter.

Robust isothermal electric control of exchange bias at room temperature

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Néel temperature.