Electrochemical formation of ordered pore arrays in InP in KCl

Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm-3 or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.

Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.