Heterogeneously grown tunable group-IV laser on silicon

Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si.

Effects of spin on high-energy radiation from accreting black holes

Observations of jets in X-ray binaries show a correlation between radio power and black hole spin. This correlation, if confirmed, points toward the idea that relativistic jets may be powered by the rotational energy of black holes. In order to examine this further, we perform general relativistic radiative transport calculations on magnetically arrested accretion flows, which are known to produce powerful jets via the Blandfordâ Znajek (BZ) mechanism. We find that the X-ray and γ-ray emission strongly depend on spin and inclination angle. Surprisingly, the high-energy power does not show the same dependence on spin as the BZ jet power, but instead can be understood as a redshift effect. In particular, photons observed perpendicular to the spin axis suffer little net redshift until originating from close to the horizon. Such observers see deeper into the hot, dense, highly magnetized inner disk region. This effect is largest for rapidly rotating black holes due to a combination of frame dragging and decreasing horizon radius. While the X-ray emission is dominated by the near horizon region, the near-infrared (NIR) radiation originates at larger radii. Therefore, the ratio of X-ray to NIR power is an observational signature of black hole spin.