Primary wave energy conversions of oscillating water columns

This paper presents a study on the numerical simulation of the primary wave energy conversion in the oscillating water column (OWC) wave energy converters (WECs). The new proposed numerical approach consists of three major components: potential flow analysis for the conventional hydrodynamic parameters, such as added mass, damping coefficients, restoring force coefficients and wave excitations; the thermodynamic analysis of the air in the air chamber, which is under the assumptions of the given power take-off characteristics and an isentropic process of air flow. In the formulation, the air compressibility and its effects have been included; and a time-domain analysis by combining the linear potential flow and the thermodynamics of the air flow in the chamber, in which the hydrodynamics and thermodynamics/aerodynamics have been coupled together by the force generated by the pressurised and de-pressurised air in the air chamber, which in turn has effects on the motions of the structure and the internal water surface. As an example, the new developed approach has been applied to a fixed OWC device. The comparisons of the measured data and the simulation results show the new method is very capable of predicting the performance of the OWC devices.

Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors

Silicon carbide (SiC) is a promising material for electronics due to its hardness, and ability to carry high currents and high operating temperature. SiC films are currently deposited using chemical vapor deposition (CVD) at high temperatures 1500–1600 °C. However, there is a need to deposit SiC-based films on the surface of high aspect ratio features at low temperatures. One of the most precise thin film deposition techniques on high-aspect-ratio surfaces that operates at low temperatures is atomic layer deposition (ALD). However, there are currently no known methods for ALD of SiC. Herein, the authors present a first-principles thermodynamic analysis so as to screen different precursor combinations for SiC thin films. The authors do this by calculating the Gibbs energy ΔGΔG of the reaction using density functional theory and including the effects of pressure and temperature. This theoretical model was validated for existing chemical reactions in CVD of SiC at 1000 °C. The precursors disilane (Si2H6), silane (SiH4), or monochlorosilane (SiH3Cl) with ethyne (C2H2), carbontetrachloride (CCl4), or trichloromethane (CHCl3) were predicted to be the most promising for ALD of SiC at 400 °C.