In-situ examination of the selective etching of an alkanethiol monolayer covered Au{111} surface

An examination of the selective etching mechanism of a 1-alkanethiol self-assembled monolayer (SAM) covered Au{111} surface using in-situ atomic force microscopy (AFM) and molecular resolution scanning tunnelling microscopy (STM) is presented. The monolayer self-assembles on a smooth Au{111} surface and typically contains nanoscale non-uniformities such as pinholes, domain boundaries and monatomic depressions. During etching in a ferri/ferrocyanide water-based etchant, selective and preferential etching occurs at SAM covered Au(111) terrace and step edges where a lower SAM packing density is observed, resulting in triangular islands being relieved. The triangular islands are commensurate with the Au(111) lattice with their long edges parallel to its [11-0] direction. Thus, SAM etching is selective and preferential attack is localized to defects and step edges at sites of high molecular density contrast.

Magnetic multilayer fabrication technology with selective activation of SU-8 films

Developing magnetic multilayers are essential for reducing the core eddy current losses in the integrated power magnetic components (inductors/transformers). PVD based processes are typically used to achieve the multilayers with thin dielectric spacers. However, those processes are costly, and can be difficult to integrate. It is evident that cost effective alternative is needed. In recent years, electrochemical processes have been investigated to address these issues. One such method would be to successive metallization of insulating photoresists acting as spacer layer (such as SU-8) with soft magnetic films (such as Ni-Fe-Co alloys). This paper describes an experimental procedure to fabricate magnetic multilayers with a thin variant of SU-8 2 (< 1.5 µm) as inter-layers for integrated micro-inductors/transformers for power conversion applications.