The operation of multiquantum-well barriers

The multiquantum barrier (MQB), proposed by Iga et al in 1986, has been shown by several researchers to be an effective structure for improving the operating characteristics of laser diodes. These improvements include a reduction in the laser threshold current and increased characteristic temperatures. The operation of the MQB has been described as providing an increased barrier to electron overflow by reflecting high energy electrons trying to escape from the active region of the laser.This is achieved in a manner analogous to a Bragg reflector in optics. This thesis presents an investigation of the effectiveness of the MQB as an electron reflector. Numerical models have been developed for calculating the electron reflection due to MQB. Novel optical and electrical characterisation techniques have been used to try to measure an increase in barrier height due to the MQB in AlGaInP.It has been shown that the inclusion of MQB structures in bulk double heterostructure visible laser diodes can halve the threshold current above room temperature and the characteristic temperature of these lasers can be increased by up to 20K.These improvements are shown to occur in visible laser diodes even with the inclusion of theoretically ineffective MQB structures, hence the observed improvement in the characteristics of the laser diodes described above cannot be uniquely attributed to an increased barrier height due to enhance electron reflection. It is proposed here that the MQB improves the performance of laser diodes by proventing the diffusion of zinc into the active region of the laser. It is also proposed that the trapped zinc in the MQB region of the laser diode locally increases the p-type doping bringing the quasi-Fermi level for holes closer to the valence band edge thus increasing the barrier to electron overflow in the conduction band.

Analysis and optimisation of semiconductor reflective modulators for optical networks

Reflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.

Burst-mode electronic dispersion compensation in long reach PONs

Long reach passive optical networks (LR-PONs), which integrate fibre-to-the-home with metro networks, have been the subject of intensive research in recent years and are considered one of the most promising candidates for the next generation of optical access networks. Such systems ideally have reaches greater than 100km and bit rates of at least 10Gb/s per wavelength in the downstream and upstream directions. Due to the limited equipment sharing that is possible in access networks, the laser transmitters in the terminal units, which are usually the most expensive components, must be as cheap as possible. However, the requirement for low cost is generally incompatible with the need for a transmitter chirp characteristic that is optimised for such long reaches at 10Gb/s, and hence dispersion compensation is required. In this thesis electronic dispersion compensation (EDC) techniques are employed to increase the chromatic dispersion tolerance and to enhance the system performance at the expense of moderate additional implementation complexity. In order to use such EDC in LR-PON architectures, a number of challenges associated with the burst-mode nature of the upstream link need to be overcome. In particular, the EDC must be made adaptive from one burst to the next (burst-mode EDC, or BM-EDC) in time scales on the order of tens to hundreds of nanoseconds. Burst-mode operation of EDC has received little attention to date. The main objective of this thesis is to demonstrate the feasibility of such a concept and to identify the key BM-EDC design parameters required for applications in a 10Gb/s burst-mode link. This is achieved through a combination of simulations and transmission experiments utilising off-line data processing. The research shows that burst-to-burst adaptation can in principle be implemented efficiently, opening the possibility of low overhead, adaptive EDC-enabled burst-mode systems.