Producing turbulent speech sounds in the context of cleft palate.

Aims and Scope: No sound class requires so much basic knowledge of phonology, acoustics, aerodynamics, and speech production as obstruents (turbulent sounds) do. This book is intended to bridge a gap by introducing the reader to the world of obstruents from a multidisciplinary perspective. It starts with a review of typological processes, continues with various contributions to the phonetics-phonology interface, explains the realization of specific turbulent sounds in endangered languages, and finishes with surveys of obstruents from a sociophonetic, physical and pathological perspective.

Primary wave energy conversions of oscillating water columns

This paper presents a study on the numerical simulation of the primary wave energy conversion in the oscillating water column (OWC) wave energy converters (WECs). The new proposed numerical approach consists of three major components: potential flow analysis for the conventional hydrodynamic parameters, such as added mass, damping coefficients, restoring force coefficients and wave excitations; the thermodynamic analysis of the air in the air chamber, which is under the assumptions of the given power take-off characteristics and an isentropic process of air flow. In the formulation, the air compressibility and its effects have been included; and a time-domain analysis by combining the linear potential flow and the thermodynamics of the air flow in the chamber, in which the hydrodynamics and thermodynamics/aerodynamics have been coupled together by the force generated by the pressurised and de-pressurised air in the air chamber, which in turn has effects on the motions of the structure and the internal water surface. As an example, the new developed approach has been applied to a fixed OWC device. The comparisons of the measured data and the simulation results show the new method is very capable of predicting the performance of the OWC devices.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.