The influence of thermal plasma profiles on low-frequency Alfvén eigenmode dynamics in a tokamak

The confinement of fast particles, present in a tokamak plasma as nuclear fusion products and through external heating, will be essential for any future fusion reactor. Fast particles can be expelled from the plasma through their interaction with Alfvén eigenmode (AE) instabilities. AEs can exist in gaps in the Alfvén continuum created by plasma equilibrium non-uniformities. In the ASDEX Upgrade tokamak, low-frequency modes in the frequency range from f ≈ 10 − 90kHz, including beta-induced Alfvén eigenmodes (BAEs) and lower frequency modes with mixed Alfvén and acoustic polarisations, have been observed. These exist in gaps in the Alfvén continuum opened up by geodesic curvature and finite plasma compressibility. In this thesis, a kinetic dispersion relation is solved numerically to investigate the influence of thermal plasma profiles on the evolution of these low-frequency modes during the sawtooth cycle. Using information gained from various experimental sources to constrain the equilibrium reconstructions, realistic safety factor profiles are obtained for the analysis using the CLISTE code. The results for the continuum accumulation point evolution are then compared with experimental results from ASDEX Upgrade during periods of ICRH only as well as for periods with both ICRH and ECRH applied simultaneously. It is found that the diamagnetic frequency plays an important role in influencing the dynamics of BAEs and low-frequency acoustic Alfvén eigenmodes, primarily through the presence of gradients in the thermal plasma profiles. Different types of modes that are observed during discharges heated almost exclusively by ECRH were also investigated. These include electron internal transport barrier (eITB) driven modes, which are observed to coincide with the occurrence of an eITB in the plasma during the low-density phase of the discharge. Also observed are BAE-like modes and edge-TAEs, both of which occur during the H-mode phase of the discharge.

Engineering interfacial silicon dioxide for improved metal-insulator-semiconductor silicon photoanode water splitting performance

Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.