Epitaxial growth of visible to infra-red transparent conducting In2O3 nanodot dispersions and reversible charge storage as a Li-ion battery anode

Unique bimodal distributions of single crystal epitaxially grown In2O3 nanodots on silicon are shown to have excellent IR transparency greater than 87% at IR wavelengths up to 4 μm without sacrificing transparency in the visible region. These broadband antireflective nanodot dispersions are grown using a two-step metal deposition and oxidation by molecular beam epitaxy, and backscattered diffraction confirms a dominant (111) surface orientation. We detail the growth of a bimodal size distribution that facilitates good surface coverage (80%) while allowing a significant reduction in In2O3 refractive index. This unique dispersion offers excellent surface coverage and three-dimensional volumetric expansion compared to a thin film, and a step reduction in refractive index compared to bulk active materials or randomly porous composites, to more closely match the refractive index of an electrolyte, improving transparency. The (111) surface orientation of the nanodots, when fully ripened, allows minimum lattice mismatch strain between the In2O3 and the Si surface. This helps to circumvent potential interfacial weakening caused by volume contraction due to electrochemical reduction to lithium, or expansion during lithiation. Cycling under potentiodynamic conditions shows that the transparent anode of nanodots reversibly alloys lithium with good Coulombic efficiency, buffered by co-insertion into the silicon substrate. These properties could potentially lead to further development of similarly controlled dispersions of a range of other active materials to give transparent battery electrodes or materials capable of non-destructive in situ spectroscopic characterization during charging and discharging.

Evaporation maps for ternary non-ideal liquid mixtures

This thesis deals with the evaporation of non-ideal liquid mixtures using a multicomponent mass transfer approach. It develops the concept of evaporation maps as a convenient way of representing the dynamic composition changes of ternary mixtures during an evaporation process. Evaporation maps represent the residual composition of evaporating ternary non-ideal mixtures over the full range of composition, and are analogous to the commonly-used residue curve maps of simple distillation processes. The evaporation process initially considered in this work involves gas-phase limited evaporation from a liquid or wetted-solid surface, over which a gas flows at known conditions. Evaporation may occur into a pure inert gas, or into one pre-loaded with a known fraction of one of the ternary components. To explore multicomponent masstransfer effects, a model is developed that uses an exact solution to the Maxwell-Stefan equations for mass transfer in the gas film, with a lumped approach applied to the liquid phase. Solutions to the evaporation model take the form of trajectories in temperaturecomposition space, which are then projected onto a ternary diagram to form the map. Novel algorithms are developed for computation of pseudo-azeotropes in the evaporating mixture, and for calculation of the multicomponent wet-bulb temperature at a given liquid composition. A numerical continuation method is used to track the bifurcations which occur in the evaporation maps, where the composition of one component of the pre-loaded gas is the bifurcation parameter. The bifurcation diagrams can in principle be used to determine the required gas composition to produce a specific terminal composition in the liquid. A simple homotopy method is developed to track the locations of the various possible pseudo-azeotropes in the mixture. The stability of pseudo-azeotropes in the gas-phase limited case is examined using a linearized analysis of the governing equations. Algorithms for the calculation of separation boundaries in the evaporation maps are developed using an optimization-based method, as well as a method employing eigenvectors derived from the linearized analysis. The flexure of the wet-bulb temperature surface is explored, and it is shown how evaporation trajectories cross ridges and valleys, so that ridges and valleys of the surface do not coincide with separation boundaries. Finally, the assumption of gas-phase limited mass transfer is relaxed, by employing a model that includes diffusion in the liquid phase. A finite-volume method is used to solve the system of partial differential equations that results. The evaporation trajectories for the distributed model reduce to those of the lumped (gas-phase limited) model as the diffusivity in the liquid increases; under the same gas-phase conditions the permissible terminal compositions of the distributed and lumped models are the same.

Modifying germanium nanowires for future devices: an in situ TEM study

Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a nanowire, a stable support which reduces strain in the nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key conclusions of each chapter and discusses an outlook on the future of germanium nanowire studies to facilitate their future incorporation into nanodevices.