All-optical modulation converter for on-off keying to duobinary and alternate-mark inversion at 42.6 Gbps

Advanced modulation formats have become increasingly important as telecoms engineers strive for improved tolerance to both linear and nonlinear fibre-based transmission impairments. Two important modulation schemes are Duobinary (DB) and Alternate-mark inversion (AMI) [1] where transmission enhancement results from auxiliary phase modulation. As advanced modulation formats displace Return-to-zero On-Off Keying (RZ-OOK), inter-modulation converters will become increasingly important. If the modulation conversion can be performed at high bitrates with a small number of operations per bit, then all-optical techniques may offer lower energy consumption compared to optical-electronic-optical approaches. In this paper we experimentally demonstrate an all-optical system incorporating a pair of hybrid-integrated semiconductor optical amplifier (SOA)-based Mach-Zehnder interferometer (MZI) gates which translate RZ-OOK to RZ-DB or RZ-AMI at 42.6 Gbps. This scheme includes a wavelength conversion to arbitrary output wavelength and has potential for high-level photonic integration, scalability to higher bitrates, and should exhibit regenerative properties [2].

Novel all-optical on-off-keyed to alternate-mark-inversion converter

We numerically investigate a novel 40 Gbps OOK to AMI all-optical modulation format converter employing an SOA-based Mach-Zehnder interferometer.  We demonstrate operation with a 27-1 PRBS and explain the phase modulation's relationship with patterning.

Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

This PhD covers the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to investigate the impact of forming gas annealing (FGA) on device performance. Following FGA, the devices exhibited a subthreshold swing (SS) of 150mV/dec., an ION/IOFF of 104 and the transconductance, drive current and peak effective mobility increased by 29%, 25% and 15%, respectively. An alternative technique, based on the fitting of the measured full-gate capacitance vs gate voltage using a selfconsistent Poisson-Schrödinger solver, was developed to extract the trap energy profile across the full In0.53Ga0.47As bandgap and beyond. A multi-frequency inversion-charge pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge density (Ninv) = 7*1011cm2 and rapidly decreasing to ~600cm2/V.s for Ninv = 1*1013 cm2, consistent with a μeff limited by surface roughness scattering. Atomic force microscopy measurements confirmed a large surface roughness of 1.95±0.28nm on the In0.53Ga0.47As channel caused by the S/D activation anneal. In order to circumvent the issue relative to S/D formation, a junctionless In0.53Ga0.47As device was developed. A digital etch was used to thin the In0.53Ga0.47As channel and investigate the impact of channel thickness (tInGaAs) on device performance. Scaling of the SS with tInGaAs was observed for tInGaAs going from 24 to 16nm, yielding a SS of 115mV/dec. for tInGaAs = 16nm. Flat-band μeff values of 2130 and 1975cm2/V.s were extracted on devices with tInGaAs of 24 and 20nm, respectively