Nanostructured materials for Lithium-ion battery technology

The Li-ion battery has for several years been at the forefront of powering an ever-increasing number of modem consumer electronic devices such as laptops, tablet PCs, cell phones, portable music players etc., while in more recent times, has also been sought to power a range of emerging electric and hybrid-electric vehicle classes. Given their extreme popularity, a number of features which define the performance of the Li-ion battery have become a target of improvement and have garnered tremendous research effort over the past two decades. Features such as battery capacity, voltage, lifetime, rate performance, together with important implications such as safety, environmental benignity and cost have all attracted attention. Although properties such as cell voltage and theoretical capacity are bound by the selection of electrode materials which constitute its interior, other performance makers of the Li-ion battery such as actual capacity, lifetime and rate performance may be improved by tailoring such materials with characteristics favourable to Li+ intercalation. One such tailoring route involves shrinking of the constituent electrode materials to that of the nanoscale, where the ultra-small diameters may bestow favourable Li+ intercalation properties while providing a necessary mechanical robustness during routine electrochemical operation. The work detailed in this thesis describes a range of synthetic routes taken in nanostructuring a selection of choice Li-ion positive electrode candidates, together with a review of their respective Li-ion performances. Chapter one of this thesis serves to highlight a number of key advancements which have been made and detailed in the literature over recent years pertaining to the use of nanostructured materials in Li-ion technology. Chapter two provides an overview of the experimental conditions and techniques employed in the synthesis and electrochemical characterisation of the as-prepared electrode materials constituting this doctoral thesis. Chapter three details the synthesis of small-diameter V2O5 and V2O5/TiO2 nanocomposite structures prepared by a novel carbon nanocage templating method using liquid precursors. Chapter four details a hydrothermal synthesis and characterisation of nanostructured β-LiVOPO4 powders together with an overview of their Li+ insertion properties while chapter five focuses on supercritical fluid synthesis as one technique in the tailoring of FeF2 and CoF2 powders having potentially appealing Li-ion 'conversion' properties. Finally, chapter six summarises the overall conclusions drawn from the results presented in this thesis, coupled with an indication of potential future work which may be explored upon the materials described in this work.

Novel processes, test structures and characterisation for future germanium technologies

In order to widely use Ge and III-V materials instead of Si in advanced CMOS technology, the process and integration of these materials has to be well established so that their high mobility benefit is not swamped by imperfect manufacturing procedures. In this dissertation number of key bottlenecks in realization of Ge devices are investigated; We address the challenge of the formation of low resistivity contacts on n-type Ge, comparing conventional and advanced rapid thermal annealing (RTA) and laser thermal annealing (LTA) techniques respectively. LTA appears to be a feasible approach for realization of low resistivity contacts with an incredibly sharp germanide-substrate interface and contact resistivity in the order of 10 -7 Ω.cm2. Furthermore the influence of RTA and LTA on dopant activation and leakage current suppression in n+/p Ge junction were compared. Providing very high active carrier concentration > 1020 cm-3, LTA resulted in higher leakage current compared to RTA which provided lower carrier concentration ~1019 cm-3. This is an indication of a trade-off between high activation level and junction leakage current. High ION/IOFF ratio ~ 107 was obtained, which to the best of our knowledge is the best reported value for n-type Ge so far. Simulations were carried out to investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts and how they are dependent on the target physical material properties. Solid phase epitaxy studies in wide and thin Ge fins confirmed the formation of twin boundary defects and random nucleation growth, like in Si, but here 600 °C annealing temperature was found to be effective to reduce these defects. Finally, a non-destructive doping technique was successfully implemented to dope Ge nanowires, where nanowire resistivity was reduced by 5 orders of magnitude using PH3 based in-diffusion process.

A new latching control technology for improving wave energy conversion

Extracting wave energy from seas has been proven to be very difficult although various technologies have been developed since 1970s. Among the proposed technologies, only few of them have been actually progressed to the advanced stages such as sea trials or pre-commercial sea trial and engineering. One critical question may be how we can design an efficient wave energy converter or how the efficiency of a wave energy converter can be improved using optimal and control technologies, because higher energy conversion efficiency for a wave energy converter is always pursued and it mainly decides the cost of the wave energy production. In this first part of the investigation, some conventional optimal and control technologies for improving wave energy conversion are examined in a form of more physical meanings, rather than the purely complex mathematical expressions, in which it is hoped to clarify some confusions in the development and the terminologies of the technologies and to help to understand the physics behind the optimal and control technologies. As a result of the understanding of the physics and the principles of the optima, a new latching technology is proposed, in which the latching duration is simply calculated from the wave period, rather than based on the future information/prediction, hence the technology could remove one of the technical barriers in implementing this control technology. From the examples given in the context, this new latching control technology can achieve a phase optimum in regular waves, and hence significantly improve wave energy conversion. Further development on this latching control technologies can be found in the second part of the investigation.

Organic functionalisation, doping and characterisation of semiconductor surfaces for future CMOS device applications

Organic Functionalisation, Doping and Characterisation of Semiconductor Surfaces for Future CMOS Device Applications Semiconductor materials have long been the driving force for the advancement of technology since their inception in the mid-20th century. Traditionally, micro-electronic devices based upon these materials have scaled down in size and doubled in transistor density in accordance with the well-known Moore’s law, enabling consumer products with outstanding computational power at lower costs and with smaller footprints. According to the International Technology Roadmap for Semiconductors (ITRS), the scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) is proceeding at a rapid pace and will reach sub-10 nm dimensions in the coming years. This scaling presents many challenges, not only in terms of metrology but also in terms of the material preparation especially with respect to doping, leading to the moniker “More-than-Moore”. Current transistor technologies are based on the use of semiconductor junctions formed by the introduction of dopant atoms into the material using various methodologies and at device sizes below 10 nm, high concentration gradients become a necessity. Doping, the controlled and purposeful addition of impurities to a semiconductor, is one of the most important steps in the material preparation with uniform and confined doping to form ultra-shallow junctions at source and drain extension regions being one of the key enablers for the continued scaling of devices. Monolayer doping has shown promise to satisfy the need to conformally dope at such small feature sizes. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from the traditional silicon and germanium devices to emerging replacement materials such as III-V compounds This thesis aims to investigate the potential of monolayer doping to complement or replace conventional doping technologies currently in use in CMOS fabrication facilities across the world.