Orthogonal chirp division multiplexing for coherent optical fiber communications

In this paper, we propose an orthogonal chirp division multiplexing (OCDM) technique for coherent optical communication. OCDM is the principle of orthogonally multiplexing a group of linear chirped waveforms for high-speed data communication, achieving the maximum spectral efficiency (SE) for chirp spread spectrum, in a similar way as the orthogonal frequency division multiplexing (OFDM) does for frequency division multiplexing. In the coherent optical (CO)-OCDM, Fresnel transform formulates the synthesis of the orthogonal chirps; discrete Fresnel transform (DFnT) realizes the CO-OCDM in the digital domain. As both the Fresnel and Fourier transforms are trigonometric transforms, the CO-OCDM can be easily integrated into the existing CO-OFDM systems. Analyses and numerical results are provided to investigate the transmission of CO-OCDM signals over optical fibers. Moreover, experiments of 36-Gbit/s CO-OCDM signal are carried out to validate the feasibility and confirm the analyses. It is shown that the CO-OCDM can effectively compensate the dispersion and is more resilient to fading and noise impairment than OFDM.

Dual-layer frequency-selective grid polarizers on thin-film substrates for THz applications

Dual-layer frequency-selective subwavelength grid polarizers on thin-film dielectric substrates are proposed for THz and sub-THz applications. The dual-layer grids possess enhanced (squared) polarizing efficiency at a sequence of discrete frequencies in reflection and within extended frequency bands in transmission as compared to conventional single grids.

Properties and applications of injection locking in 1.55 μm quantum-dash mode-locked semiconductor lasers

Mode-locked semiconductor lasers are compact pulsed sources with ultra-narrow pulse widths and high repetition-rates. In order to use these sources in real applications, their performance needs to be optimised in several aspects, usually by external control. We experimentally investigate the behaviour of recently-developed quantum-dash mode-locked lasers (QDMLLs) emitting at 1.55 μm under external optical injection. Single-section and two-section lasers with different repetition frequencies and active-region structures are studied. Particularly, we are interested in a regime which the laser remains mode-locked and the individual modes are simultaneously phase-locked to the external laser. Injection-locked self-mode-locked lasers demonstrate tunable microwave generation at first or second harmonic of the free-running repetition frequency with sub-MHz RF linewidth. For two-section mode-locked lasers, using dual-mode optical injection (injection of two coherent CW lines), narrowing the RF linewidth close to that of the electrical source, narrowing the optical linewidths and reduction in the time-bandwidth product is achieved. Under optimised bias conditions of the slave laser, a repetition frequency tuning ratio >2% is achieved, a record for a monolithic semiconductor mode-locked laser. In addition, we demonstrate a novel all-optical stabilisation technique for mode-locked semiconductor lasers by combination of CW optical injection and optical feedback to simultaneously improve the time-bandwidth product and timing-jitter of the laser. This scheme does not need an RF source and no optical to electrical conversion is required and thus is ideal for photonic integration. Finally, an application of injection-locked mode-locked lasers is introduced in a multichannel phase-sensitive amplifier (PSA). We show that with dual-mode injection-locking, simultaneous phase-synchronisation of two channels to local pump sources is realised through one injection-locking stage. An experimental proof of concept is demonstrated for two 10 Gbps phase-encoded (DPSK) channels showing more than 7 dB phase-sensitive gain and less than 1 dB penalty of the receiver sensitivity.

Voltage properties of optically injected long wavelength VCSELs: Theory and experiment

Future high speed communications networks will transmit data predominantly over optical fibres. As consumer and enterprise computing will remain the domain of electronics, the electro-optical conversion will get pushed further downstream towards the end user. Consequently, efficient tools are needed for this conversion and due to many potential advantages, including low cost and high output powers, long wavelength Vertical Cavity Surface Emitting Lasers (VCSELs) are a viable option. Drawbacks, such as broader linewidths than competing options, can be mitigated through the use of additional techniques such as Optical Injection Locking (OIL) which can require significant expertise and expensive equipment. This thesis addresses these issues by removing some of the experimental barriers to achieving performance increases via remote OIL. Firstly, numerical simulations of the phase and the photon and carrier numbers of an OIL semiconductor laser allowed the classification of the stable locking phase limits into three distinct groups. The frequency detuning of constant phase values (ø) was considered, in particular ø = 0 where the modulation response parameters were shown to be independent of the linewidth enhancement factor, α. A new method to estimate α and the coupling rate in a single experiment was formulated. Secondly, a novel technique to remotely determine the locked state of a VCSEL based on voltage variations of 2mV−30mV during detuned injection has been developed which can identify oscillatory and locked states. 2D & 3D maps of voltage, optical and electrical spectra illustrate corresponding behaviours. Finally, the use of directly modulated VCSELs as light sources for passive optical networks was investigated by successful transmission of data at 10 Gbit/s over 40km of single mode fibre (SMF) using cost effective electronic dispersion compensation to mitigate errors due to wavelength chirp. A widely tuneable MEMS-VCSEL was established as a good candidate for an externally modulated colourless source after a record error free transmission at 10 Gbit/s over 50km of SMF across a 30nm single mode tuning range. The ability to remotely set the emission wavelength using the novel methods developed in this thesis was demonstrated.

The influence of thermal plasma profiles on low-frequency Alfvén eigenmode dynamics in a tokamak

The confinement of fast particles, present in a tokamak plasma as nuclear fusion products and through external heating, will be essential for any future fusion reactor. Fast particles can be expelled from the plasma through their interaction with Alfvén eigenmode (AE) instabilities. AEs can exist in gaps in the Alfvén continuum created by plasma equilibrium non-uniformities. In the ASDEX Upgrade tokamak, low-frequency modes in the frequency range from f ≈ 10 − 90kHz, including beta-induced Alfvén eigenmodes (BAEs) and lower frequency modes with mixed Alfvén and acoustic polarisations, have been observed. These exist in gaps in the Alfvén continuum opened up by geodesic curvature and finite plasma compressibility. In this thesis, a kinetic dispersion relation is solved numerically to investigate the influence of thermal plasma profiles on the evolution of these low-frequency modes during the sawtooth cycle. Using information gained from various experimental sources to constrain the equilibrium reconstructions, realistic safety factor profiles are obtained for the analysis using the CLISTE code. The results for the continuum accumulation point evolution are then compared with experimental results from ASDEX Upgrade during periods of ICRH only as well as for periods with both ICRH and ECRH applied simultaneously. It is found that the diamagnetic frequency plays an important role in influencing the dynamics of BAEs and low-frequency acoustic Alfvén eigenmodes, primarily through the presence of gradients in the thermal plasma profiles. Different types of modes that are observed during discharges heated almost exclusively by ECRH were also investigated. These include electron internal transport barrier (eITB) driven modes, which are observed to coincide with the occurrence of an eITB in the plasma during the low-density phase of the discharge. Also observed are BAE-like modes and edge-TAEs, both of which occur during the H-mode phase of the discharge.