A dual-band antenna enabling improved quality of service in multi-radio wireless sensor applications in indoor environments

Science Foundation Ireland (CSET - Centre for Science, Engineering and Technology, Grant No. 07/CE/11147)

A novel and miniaturized 433/868MHz multi-band wireless sensor platform for body sensor network applications

Body Sensor Network (BSN) technology is seeing a rapid emergence in application areas such as health, fitness and sports monitoring. Current BSN wireless sensors typically operate on a single frequency band (e.g. utilizing the IEEE 802.15.4 standard that operates at 2.45GHz) employing a single radio transceiver for wireless communications. This allows a simple wireless architecture to be realized with low cost and power consumption. However, network congestion/failure can create potential issues in terms of reliability of data transfer, quality-of-service (QOS) and data throughput for the sensor. These issues can be especially critical in healthcare monitoring applications where data availability and integrity is crucial. The addition of more than one radio has the potential to address some of the above issues. For example, multi-radio implementations can allow access to more than one network, providing increased coverage and data processing as well as improved interoperability between networks. A small number of multi-radio wireless sensor solutions exist at present but require the use of more than one radio transceiver devices to achieve multi-band operation. This paper presents the design of a novel prototype multi-radio hardware platform that uses a single radio transceiver. The proposed design allows multi-band operation in the 433/868MHz ISM bands and this, together with its low complexity and small form factor, make it suitable for a wide range of BSN applications.

Dilute nitride semiconductors : band structure, scattering and high field transport

The substitution of a small fraction x of nitrogen atoms, for the group V elements in conventional III-V semiconductors such as GaAs and GaSb strongly perturbs the conduction band of the host semiconductor. In this thesis we investigate the effects of nitrogen states on the band dispersion, carrier scattering and mobility of dilute nitride alloys. In the supercell model we solve the single particle Hamiltonian for a very large supercell containing randomly placed nitrogen. This model predicts a gap in the density of states of GaNxAs1−x, where this gap is filled in the Green’s function model. Therefore we develop a self-consistent Green’s function (SCGF) approach, which provides excellent agreement with supercell calculations and reveals a gap in the DOS, in contrast with the results of previous non-self-consistent Green’s function calculations. However, including the distribution of N states destroys this gap, as seen in experiment. We then examine the high field transport of carriers by solving the steadystate Boltzmann transport equation and find that it is necessary to include the full distribution of N levels in order to account for the small, low-field mobility and the absence of a negative differential velocity regime observed experimentally with increasing x. Overall the results account well for a wide range of experimental data. We also investigate the band structure, scattering and mobility of carriers by finding the poles of the SCGF, which gives lower carrier mobility for GaNxAs1−x, compared to those already calculated, in better agreement with experiments. The calculated optical absorption spectra for InyGa1−yNxAs1−x and GaNxSb1−x using the SCGF agree well with the experimental data, confirming the validity of this approach to study the band structure of these materials.