High-current inductors for high-power automotive DC-DC converters

This thesis is focused on the investigation of magnetic materials for high-power dcdc converters in hybrid and fuel cell vehicles and the development of an optimized high-power inductor for a multi-phase converter. The thesis introduces the power system architectures for hybrid and fuel cell vehicles. The requirements for power electronic converters are established and the dc-dc converter topologies of interest are introduced. A compact and efficient inductor is critical to reduce the overall cost, weight and volume of the dc-dc converter and optimize vehicle driving range and traction power. Firstly, materials suitable for a gapped CC-core inductor are analyzed and investigated. A novel inductor-design algorithm is developed and automated in order to compare and contrast the various magnetic materials over a range of frequencies and ripple ratios. The algorithm is developed for foil-wound inductors with gapped CC-cores in the low (10 kHz) to medium (30 kHz) frequency range and investigates the materials in a natural-convection-cooled environment. The practical effects of frequency, ripple, air-gap fringing, and thermal configuration are investigated next for the iron-based amorphous metal and 6.5 % silicon steel materials. A 2.5 kW converter is built to verify the optimum material selection and thermal configuration over the frequency range and ripple ratios of interest. Inductor size can increase in both of these laminated materials due to increased airgap fringing losses. Distributing the airgap is demonstrated to reduce the inductor losses and size but has practical limitations for iron-based amorphous metal cores. The effects of the manufacturing process are shown to degrade the iron-based amorphous metal multi-cut core loss. The experimental results also suggest that gap loss is not a significant consideration in these experiments. The predicted losses by the equation developed by Reuben Lee and cited by Colonel McLyman are significantly higher than the experimental results suggest. Iron-based amorphous metal has better preformance than 6.5 % silicon steel when a single cut core and natural-convection-cooling are used. Conduction cooling, rather than natural convection, can result in the highest power density inductor. The cooling for these laminated materials is very dependent on the direction of the lamination and the component mounting. Experimental results are produced showing the effects of lamination direction on the cooling path. A significant temperature reduction is demonstrated for conduction cooling versus natural-convection cooling. Iron-based amorphous metal and 6.5% silicon steel are competitive materials when conduction cooled. A novel inductor design algorithm is developed for foil-wound inductors with gapped CC-cores for conduction cooling of core and copper. Again, conduction cooling, rather than natural convection, is shown to reduce the size and weight of the inductor. The weight of the 6.5 % silicon steel inductor is reduced by around a factor of ten compared to natural-convection cooling due to the high thermal conductivity of the material. The conduction cooling algorithm is used to develop high-power custom inductors for use in a high power multi-phase boost converter. Finally, a high power digitally-controlled multi-phase boost converter system is designed and constructed to test the high-power inductors. The performance of the inductors is compared to the predictions used in the design process and very good correlation is achieved. The thesis results have been documented at IEEE APEC, PESC and IAS conferences in 2007 and at the IEEE EPE conference in 2008.

Theory of the electronic and optical properties of dilute bismide alloys

Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the III-V semiconductor GaAs are replaced by Bi, exhibit a number of unusual and unique properties. For example, the band gap energy (E g) decreases rapidly with increasing Bi composition x, by up to 90 meV per % Bi replacing As in the alloy. This band gap reduction is accompanied by a strong increase in the spin-orbit-splitting energy (ΔSO) with increasing x, and both E g and ΔSO are characterised by strong, composition-dependent bowing. The existence of a ΔSO > E g regime in the GaBixAs1−x alloy has been demonstrated for x ≳10%, a band structure condition which is promising for the development of highly efficient, temperature stable semiconductor lasers that could lead to large energy savings in future optical communication networks. In addition to their potential for specific applications, dilute bismide alloys have also attracted interest from a fundamental perspective due to their unique properties. In this thesis we develop the theory of the electronic and optical properties of dilute bismide alloys. By adopting a multi-scale approach encompassing atomistic calculations of the electronic structure using the semi-empirical tight-binding method, as well as continuum calculations based on the k•p method, we develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for applications in semiconductor optoelectronic and photovoltaic devices. By performing detailed supercell calculations on both ordered and disordered alloys we explicitly demonstrate that Bi atoms act as isovalent impurities when incorporated in dilute quantities in III-V (In)GaAs(P) materials, strongly perturbing the electronic structure of the valence band. We identify and quantify the causes and consequences of the unusual electronic properties of GaBixAs1−x and related alloys, and our analysis is reinforced throughout by a series of detailed comparisons to the results of experimental measurements. Our k•p models of the band structure of GaBixAs1−x and related alloys, which we derive directly from detailed atomistic calculations, are ideally suited to the study of dilute bismide-based devices. We focus in the latter part of the thesis on calculations of the electronic and optical properties of dilute bismide quantum well lasers. In addition to developing an understanding of the effects of Bi incorporation on the operational characteristics of semiconductor lasers, we also present calculations which have been used explicitly in designing and optimising the first generation of GaBixAs1−x-based devices.

Nanosize effect in germanium nanowire growth with binary metal alloys

This article describes feasible and improved ways towards enhanced nanowire growth kinetics by reducing the equilibrium solute concentration in the liquid collector phase in a vapor-liquid-solid (VLS) like growth model. Use of bi-metallic alloy seeds (AuxAg1-x) influences the germanium supersaturation for a faster nucleation and growth kinetics. Nanowire growth with ternary eutectic alloys shows Gibbs-Thompson effect with diameter dependent growth rate. In-situ transmission electron microscopy (TEM) annealing experiments directly confirms the role of equilibrium concentration in nanowire growth kinetics and was used to correlate the equilibrium content of metastable alloys with the growth kinetics of Ge nanowires. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires were found to vary as a function of nanowire diameter and eutectic alloy composition.