Design, synthesis and development of novel indolocarbazole derivatives as potential anti-cancer agents

This thesis describes work carried out on the design of new routes to a range of bisindolylmaleimide and indolo[2,3-a]carbazole analogs, and investigation of their potential as successful anti-cancer agents. Following initial investigation of classical routes to indolo[2,3-a]pyrrolo[3,4-c]carbazole aglycons, a new strategy employing base-mediated condensation of thiourea and guanidine with a bisindolyl β-ketoester intermediate afforded novel 5,6-bisindolylpyrimidin-4(3H)-ones in moderate yields. Chemical diversity within this H-bonding scaffold was then studied by substitution with a panel of biologically relevant electrophiles, and by reductive desulfurisation. Optimisation of difficult heterogeneous literature conditions for oxidative desulfurisation of thiouracils was also accomplished, enabling a mild route to a novel 5,6-bisindolyluracil pharmacophore to be developed within this work. The oxidative cyclisation of selected acyclic bisindolyl systems to form a new planar class of indolo[2,3-a]pyrimido[5,4-c]carbazoles was also investigated. Successful conditions for this transformation, as well as the limitations currently prevailing for this approach are discussed. Synthesis of 3,4-bisindolyl-5-aminopyrazole as a potential isostere of bisindolylmaleimide agents was encountered, along with a comprehensive derivatisation study, in order to probe the chemical space for potential protein backbone H-bonding interactions. Synthesis of a related 3,4-arylindolyl-5-aminopyrazole series was also undertaken, based on identification of potent kinase inhibition within a closely related heterocyclic template. Following synthesis of approximately 50 novel compounds with a diversity of H-bonding enzyme-interacting potential within these classes, biological studies confirmed that significant topo II inhibition was present for 9 lead compounds, in previously unseen pyrazolo[1,5-a]pyrimidine, indolo[2,3-c]carbazole and branched S,N-disubstituted thiouracil derivative series. NCI-60 cancer cell line growth inhibition data for 6 representative compounds also revealed interesting selectivity differences between each compound class, while a new pyrimido[5,4-c]carbazole agent strongly inhibited cancer cell division at 10 µM, with appreciable cytotoxic activity observed across several tumour types.

Development of InAlN HEMTs for space application

This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 GHz was demonstrated in both InAlN and AlGaN HEMTs with gate lengths of 1 μm, with InAlN HEMTs generally showing higher channel currents (~150 c.f. 60 mA/mm) but also degraded leakage properties (~ 1 x 10-4 c.f. < 1 x 10-8 A/mm) with respect to AlGaN. An analysis of device reliability was undertaken using thermal stability, radiation hardness and off-state breakdown measurements. Both InAlN and AlGaN HEMTs showed excellent stability under space-like conditions, with electrical operation maintained after exposure to 9.2 Mrad of gamma radiation at a dose rate of 6.6 krad/hour over two months and after storage at 250°C for four weeks. Furthermore a link was established between the optimisation of device performance (RF gain, power handling capabilities and leakage properties) and reliability (radiation hardness, thermal stability and breakdown properties), particularly with respect to surface passivation. Following analysis of performance and reliability data, the InAlN HEMT device fabrication process was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) and surface passivation techniques (plasma power during dielectric layer deposition), based on an existing AlGaN HEMT process. This resulted in both a reduction of the contact resistivity to around 1 x 10-4 Ω.cm2 and the suppression of degrading trap-related effects, bringing the measured gate-lag close to zero. These discoveries fostered a greater understanding of the physical mechanisms involved in device operation and manufacture, which is elaborated upon in the final chapter.