3 resultados para slow atomic beam

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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PTFE foils were irradiated with different ion beams (Xe, Au and U) with energies up to 1.5 GeV and fluences between 1 x 10(8) and 1 x 10(13) ions/cm(2) at room temperature. The induced modifications in the polymer were analyzed by FTIR, UV-Vis spectroscopy, and XRD. In the FTIR spectra, the CF2 degradation accompanied by the formation of CF3 terminal and side groups were observed. In the UV-Vis spectra, the observed increase in the absorption at UV wavelengths is an indication of polymer carbonization. From XRD, the amorphization of the material was evidenced by the decrease in the intensity of the main diffraction peak. An exponential fit of the intensity of the IR absorption peaks resulted in the following values: 2.9 +/- 0.8; 4.5 +/- 0.9 and 5.6 +/- 0.8 nm for the latent track radius after irradiation with Xe, Au and U beams, respectively. (C) 2011 Elsevier B.V. All rights reserved.

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The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 mu m standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I-DS x V-GS curves were measured. After irradiation, the RGT off-state current (I-OFF) increased approximately two orders of magnitude reaching practically the same value of the I-OFF in the CGT, which only doubled its value. (C) 2011 Elsevier B.V. All rights reserved.

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We have studied, via laser absorption spectroscopy, the velocity distribution of Li-7 atoms released from cryogenic matrices of solid neon or molecular hydrogen. The Li atoms are implanted into the Ne or H-2 matrices - grown onto a sapphire substrate - by laser ablation of a solid Li or LiH precursor. A heat pulse is then applied to the sapphire substrate sublimating the matrix together with the isolated atoms. With a NiCr film resistor deposited directly onto the sapphire substrate we are able to transfer high instantaneous power to the matrix, thus reaching a fast sublimation regime. In this regime the Li atoms can get entrained in the released matrix gas, and we were also able to achieve matrix sublimation times down to 10 mu s for both H-2 or Ne matrix, enabling us to proceed with the trapping of the species of our interest such as atomic hydrogen, lithium, and molecules. The sublimation of the H-2 matrix, with its large center-of-mass velocity, provides evidence for a new regime of one-dimensional thermalization. The laser ablated Li seems to penetrate the H-2 matrix deeper than it does in Ne. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704125]