Enhancement of optical absorption by modulation of the oxygen flow of TiO2 films deposited by reactive sputtering

Oxygen-deficient TiO2 films with enhanced visible and near-infrared optical absorption have been deposited by reactive sputtering using a planar diode radio frequency magnetron configuration. It is observed that the increase in the absorption coefficient is more effective when the O-2 gas supply is periodically interrupted rather than by a decrease of the partial O-2 gas pressure in the deposition plasma. The optical absorption coefficient at 1.5 eV increases from about 1 x 10(2) cm(-1) to more than 4 x 10(3) cm(-1) as a result of the gas flow discontinuity. A red-shift of similar to 0.24 eV in the optical absorption edge is also observed. High resolution transmission electron microscopy with composition analysis shows that the films present a dense columnar morphology, with estimated mean column width of 40nm. Moreover, the interruptions of the O-2 gas flow do not produce detectable variations in the film composition along its growing direction. X-ray diffraction and micro-Raman experiments indicate the presence of the TiO2 anatase, rutile, and brookite phases. The anatase phase is dominant, with a slight increment of the rutile and brookite phases in films deposited under discontinued O-2 gas flow. The increase of optical absorption in the visible and near-infrared regions has been attributed to a high density of defects in the TiO2 films, which is consistent with density functional theory calculations that place oxygen-related vacancy states in the upper third of the optical bandgap. The electronic structure calculation results, along with the adopted deposition method and experimental data, have been used to propose a mechanism to explain the formation of the observed oxygen-related defects in TiO2 thin films. The observed increase in sub-bandgap absorption and the modeling of the corresponding changes in the electronic structure are potentially useful concerning the optimization of efficiency of the photocatalytic activity and the magnetic doping of TiO2 films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724334]

The β to α phase transition of tantalum coatings deposited by modulated pulsed power magnetron sputtering

Tantalum coatings are of particular interest today as promising candidates to replace potentially hazardous electrodeposited chromium coatings for tribological and corrosion resistant applications, such as the internal lining on large-caliber gun barrels. Tantalum coatings have two crystalline phases, α-Ta (body-centered-cubic) and β-Ta (metastable tetragonal) that exhibit relatively different properties. Alpha-Ta is typically preferred for wear and corrosion resistant applications and unfortunately, is very difficult to deposit without the assistance of substrate heating or post-annealing treatments. Furthermore, there is no general consensus on the mechanism which causes α or β to form or if there is a phase transition or transformation from β → α during coating deposition. In this study, modulated pulsed power (MPP) magnetron sputtering was used to deposit tantalum coatings with thicknesses between 2 and 20 μm without external substrate heating. The MPP Ta coatings showed good adhesion and low residual stress. This study shows there is an abrupt β → α phase transition when the coating is 5–7 μm thick and not a total phase transformation. Thermocouple measurements reveal substrate temperature increases as a function of deposition time until reaching a saturation temperature of ~ 388 °C. The importance of substrate temperature evolution on the β → α phase transition is also explained.

Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films

The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c-AlN) and amorphous hydrogenated silicon carbide (a-SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process.