Corrosion protection of aluminium alloy by cerium conversion and conducting polymer duplex coatings

The corrosion protection of AA6063 aluminium alloy by cerium conversion, polyaniline conducting polymer and by duplex coatings has been investigated. The electrochemical behaviour was evaluated in aerated 3.5 wt.% NaCl. All coatings tested shifted the corrosion and pitting potentials to more positive values, indicating protection against corrosion. The duplex coatings are significantly more effective than each coating alone: corrosion and pitting potentials were shifted by +183 and +417 mV(SCE), respectively, by duplex coatings in relation to the untreated aluminium alloy. Optical microscopy and scanning electron microscopy are in agreement with the electrochemical results, reinforcing the superior performance of duplex coatings. (C) 2012 Elsevier Ltd. All rights reserved.

Ultra-low friction coefficient in alumina-silicon nitride pair lubricated with water

In a ball-on-disc wear test, an alumina ceramic body sliding against a silicon nitride ceramic body in water achieved an ultra-low friction coefficient (ULFC) of 0.004. The profilometer and EDX measurements indicated that the ULFC regime in this unmated Al2O3-Si3N4 pair was achieved because of the formation of a flat and smooth interface of nanometric roughness, which favored the hydrodynamic lubrication. The triboreactions formed silicon and aluminum hydroxides which contributed to decrease roughness and shear stress at the contact interface. This behavior enables the development of low energy loss water-based tribological systems using oxide ceramics. 13 2012 Elsevier B.V. All rights reserved.

Rare-earth impurities in gallium nitride: The role of the Hubbard potential

We performed a first principles investigation on the electronic properties of 4f-rare earth substitutional impurities in zincblende gallium nitride (GaN:REGa, with RE=Eu, Gd, Tb, Dy, Ho, Er and Tm). The calculations were performed within the all electron methodology and the density functional theory. We investigated how the introduction of the on-site Hubbard U potential (GGA + U) corrects the electronic properties of those impurities. We showed that a self-consistent procedure to compute the Hubbard potential provides a reliable description on the position of the 4f-related energy levels with respect of the GaN valence band top. The results were compared to available data coming from a recent phenomenological model. (C) 2012 Elsevier B.V. All rights reserved.