Relationships of Photosynthetic Photon Flux Density, air Temperature and Humidity with Tomato Leaf Diffusive Conductance and Temperature

The objective was to study the leaf temperature (LT) and leaf diffusive vapor conductance (gs) responses to temperature, humidity and incident flux density of photosynthetically active photons (PPFD) of tomato plants grown without water restriction in a plastic greenhouse in Santa Maria, RS, Brazil. The plants were grown in substrate and irrigated daily. The gs was measured using a steady-state null-balance porometer on the abaxial face of the leaves during the daytime. Both leaf surfaces were measured in one day. The PPFD and LT were measured using the porometer. Leaf temperature was determined using an infrared thermometer, and air temperature and humidity were measured using a thermohygrograph. The leaves on the upper layer of the plants had higher gs than the lower layer. The relationship between the gs and PPFD was different for the two layers in the plants. A consistent relationship between the gs and atmospheric water demand was observed only in the lower layer. The LT tended to be lower than the air temperature. The mean value for the gs was 2.88 times higher on the abaxial than adaxial leaf surface.

Nanosized precipitates in H13 tool steel low temperature plasma nitriding

A comprehensive study of pulsed nitriding in AISI H13 tool steel at low temperature (400 degrees C) is reported for several durations. X-ray diffraction results reveal that a nitrogen enriched compound (epsilon-Fe2-3N, iron nitride) builds up on the surface within the first process hour despite the low process temperature. Beneath the surface, X-ray Wavelength Dispersive Spectroscopy (WDS) in a Scanning Electron Microscope (SEM) indicates relatively higher nitrogen concentrations (up to 12 at.%) within the diffusion layer while microscopic nitrides are not formed and existing carbides are not dissolved. Moreover, in the diffusion layer, nitrogen is found to be dispersed in the matrix and forming nanosized precipitates. The small coherent precipitates are observed by High-Resolution Transmission Electron Microscopy (HR-TEM) while the presence of nitrogen is confirmed by electron energy loss spectroscopy (EELS). Hardness tests show that the material hardness increases linearly with the nitrogen concentration, reaching up to 14.5 GPa in the surface while the Young Modulus remains essentially unaffected. Indeed, the original steel microstructure is well preserved even in the nitrogen diffusion layer. Nitrogen profiles show a case depth of about similar to 43 mu m after nine hours of nitriding process. These results indicate that pulsed plasma nitriding is highly efficient even at such low temperatures and that at this process temperature it is possible to form thick and hard nitrided layers with satisfactory mechanical properties. This process can be particularly interesting to enhance the surface hardness of tool steels without exposing the workpiece to high temperatures and altering its bulk microstructure. (c) 2012 Elsevier B.V. All rights reserved.

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

The optoelectronic properties of InAs/GaAs quantum dots can be tuned by rapid thermal annealing. In this study, the morphology change of InAs/GaAs quantum dots layers induced by rapid thermal annealing was investigated at the atomic-scale by cross-sectional scanning tunneling microscopy. Finite elements calculations that model the outward relaxation of the cleaved surface were used to determine the indium composition profile of the wetting layer and the quantum dots prior and post rapid thermal annealing. The results show that the wetting layer is broadened upon annealing. This broadening could be modeled by assuming a random walk of indium atoms. Furthermore, we show that the stronger strain gradient at the location of the quantum dots enhances the intermixing. Photoluminescence measurements show a blueshift and narrowing of the photoluminescence peak. Temperature dependent photoluminescence measurements show a lower activation energy for the annealed sample. These results are in agreement with the observed change in morphology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770371]

Relationships of photosynthetic photon flux density, air temperature and humidity with tomato leaf diffusive conductance and temperature

The objective was to study the leaf temperature (LT) and leaf diffusive vapor conductance (gs) responses to temperature, humidity and incident flux density of photosynthetically active photons (PPFD) of tomato plants grown without water restriction in a plastic greenhouse in Santa Maria, RS, Brazil. The plants were grown in substrate and irrigated daily. The gs was measured using a steady-state null-balance porometer on the abaxial face of the leaves during the daytime. Both leaf surfaces were measured in one day. The PPFD and LT were measured using the porometer. Leaf temperature was determined using an infrared thermometer, and air temperature and humidity were measured using a thermohygrograph. The leaves on the upper layer of the plants had higher gs than the lower layer. The relationship between the gs and PPFD was different for the two layers in the plants. A consistent relationship between the gs and atmospheric water demand was observed only in the lower layer. The LT tended to be lower than the air temperature. The mean value for the gs was 2.88 times higher on the abaxial than adaxial leaf surface.