Persistent luminescence behavior of materials doped with Eu2+ and Tb3+

In this work, the persistent luminescence mechanisms of Tb3+ (in CdSiO3) and Eu2+ (in BaAl2O4) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter- and intraconfigurational transitions for Eu2+ and Tb3+, respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO3, determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb3+, the persistent luminescence from Tb3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of F-7(6) level deep below the bottom of the conduction band, as determined with the 4f(8)-> 4f(7)5d(1) and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb3+ and Eu2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials. (C) 2012 Optical Society of America

Persistent luminescence fading in Sr2MgSi2O7:Eu2+,R3+ materials: a thermoluminescence study

The fading of persistent luminescence in Sr2MgSi2O7:Eu2+,R3+ (R: Y, La-Nd, Sm-Lu) was studied combining thermoluminescence (TL) and room temperature (persistent) luminescence measurements to gain more information on the mechanism of persistent luminescence. The TL glow curves showed the main trap signal at ca. 80 degrees C, corresponding to 0.6 eV as the trap depth, with every R co-dopant. The TL measurements carried out with different irradiation times revealed the general order nature of the TL bands. The results obtained from the deconvolutions of the glow curves allowed the prediction of the fading of persistent luminescence with good accuracy, though only when using the Becquerel decay law. (C) 2012 Optical Society of America

DFT and synchrotron radiation study of Eu2+ doped BaAl2O4

The structural distortions resulting from the size mismatch between the Eu2+ luminescent centre and the host Ba2+ cation as well as the electronic structure of BaAl2O4:Eu2+(,Dy3+) were studied using density functional theory (DFT) calculations and synchrotron radiation (SR) luminescence spectroscopy. The modified interionic distances as well as differences in the total energies indicate that Eu2+ prefers the smaller of the two possible Ba sites in the BaAl2O4 host. The calculated Eu2+ 4f(7) and 4f(6)5d(1) ground level energies confirm that the excited electrons can reach easily the conduction band for subsequent trapping. In addition to the green luminescence, a weak blue emission band was observed in BaAl2O4:Eu2+,Dy3+ probably due to the creation of a new Ba2+ site due to the effect of water exposure on the host. (C) 2012 Optical Society of America