A LED Based Photometer for Solid Phase Photometry: Zinc Determination in Pharmaceutical Preparation Employing a Multicommuted Flow Analysis Approach

In this work, a LED (light emitting diode) based photometer for solid phase photometry is described. The photometer was designed to permit direct coupling of a light source (LED) and a photodiode to a flow cell with an optical pathlength of 4 mm. The flow cell was filled with adsorbing solid phase material (C-18), which was used to immobilize the chromogenic reagent 1-(2-thiazolylazo)-2-naphthol (TAN). Aiming to allow accuracy assessment, samples were also analyzed employing ICP OES (inductively coupled plasma optical emission spectrometry) methodology. Applying the paired t-test at the 95% confidence level, no significant difference was observed. Other useful features were also achieved: linear response ranging from 0.05 to 0.85 mg L-1 Zn, limit of detection of 9 mu g L-1 Zn (3 sigma criterion), standard deviation of 1.4% (n = 10), sampling throughput of 36 determinations per h, and a waste generation and reagent consumption of 1.7 mL and of 0.03 mu g per determination, respectively.

Analysis of the Dielectric Behavior of Distribution Insulators Under Non-Standard Lightning Impulses Voltages

Overhead distribution lines are often exposed to lightning overvoltages, whose waveforms vary widely and can differ substantially from the standard impulse voltage waveform (1,2 - 50). Different models have been proposed for predicting the strength of insulation subjected to impulses of non-standard waveforms. One of the most commonly used is the disruptive effect model, for which there are different methods for the estimation of the parameters required for its application. This paper aims at evaluating the dielectric behavior of medium voltage insulators subjected to impulses of non-standard waveforms, as well as at evaluating two methods for predicting their dielectric strength against such impulses. The test results relative to the critical lightning impulse flashover voltage (U50) and the volt-time characteristics obtained for the positive and negative polarities of different voltage waveforms are presented and discussed.

Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs

In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, uniaxial, biaxial, uniaxial+biaxial). Although the influence of radiation is more pronounced for p-channel devices, in pMuGFETs devices, the radiation promotes a higher immunity to the back interface conduction resulting in the analog performance improvement. On the other hand, the proton irradiation results in a degradation of the post-irradiated n-channel transistors behavior. The unit gain frequency showed to be strongly dependent on stress efficiency and the radiation results in an increase of the unit gain frequency for splits with high stress effectiveness for both cases p- and nMuGFETs.