Magnetic susceptibility study of Ce3+ in PbCeA (A=Te, Se, S)

The magnetic susceptibility of Pb(1-x)Ce(x)A (A=S, Se and Te) crystals with Ce3+ concentrations 0.006 <= x <= 0.036 was investigated in the temperature range from 2 K to 300 K. The magnetic susceptibility data was found to be consistent with a E-2(5/2) lowest manifold for Ce3+ ions with a crystal-field splitting Delta=E(Gamma(8))-E(Gamma(7)) of about 340 K, 440 K and 540 K for Pb1-xCexTe, Pb1-xCexSe, and Pb1-xCexS, respectively. For all the three compounds the doublet Gamma(7) lies below the Gamma(8) quadruplet which confirms the substitution of Pb2+ by Ce3+ ions in the host crystals. The observed values for the crystal-field splitting are in good agreement with the calculated ones based on the point-charge model. Moreover, the effective Lande factors were determined by X-band (similar to 9.5 GHz), electron paramagnetic measurements (EPR) to be g=1.333, 1.364, and 1.402 for Ce ions in PbA, A = S. Se and Te, respectively. The small difference with the predicted Lande factor g of 10/7 for the Gamma(7) (J=5/2) ground state was attributed to crystal-field admixture. (C) 2012 Elsevier B.V. All rights reserved.

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme [L.G. Ferreira, M. Marques, L.K. Teles, Phys. Rev. B 78 (2008) 125116] to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications. (C) 2012 Elsevier B.V. All rights reserved.