3 resultados para Nitreto de silício

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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In this work we employ the state of the art pseudopotential method, within a generalized gradient approximation to the density functional theory, to investigate the adsorption process of benzenethiol and diphenyl disulfide with the silicon (001) surface. A direct comparison of different adsorption structures with Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) allow us to identify that benzenethiol and diphenyl disulfide dissociatively adsorb on the silicon surface. In addition, theoretically obtained data suggests that the C6H5SH:Si(001) presents a higher Schottky barrier height contact when compared to other similar aromatic molecules.

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Energy transfer (ET) and heat generation processes in Yb3+/Ho3+-codoped low-silica calcium aluminosilicate glasses were investigated using thermal lens (TL) and photoluminescence measurements looking for the emission around 2.0 μm. Stepwise ET processes from Yb3+ to Ho3+, upon excitation at 0.976 μm, produced highly efficient emission in the mid-infrared range at around 2.0 μm, with high fluorescence quantum efficiency (η1 ∼ 0.85 and independent of Ho3+ concentration) and relatively very low thermal loading (<0.4) for concentration up to 1.5% of Ho2O3. An equation was deduced for the description of the TL results that provided the absolute value of η1 and the number of emitted photons at 2.0 μm per absorbed pump photon by the Yb3+ ions, the latter reaching 60% for the highest Ho3+ concentration. These results suggest that the studied codoped system would be a promising candidate for the construction of photonic devices, especially for medical applications.

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At present, solid thin films are recognized by their well established and mature processing technology that is able to produce components which, depending on their main characteristics, can perform either passive or active functions. Additionally, Si-based materials in the form of thin films perfectly match the concept of miniaturized and low-consumption devices-as required in various modern technological applications. Part of these aspects was considered in the present work that was concerned with the study of optical micro-cavities entirely based on silicon and silicon nitride thin films. The structures were prepared by the sputtering deposition method which, due to the adopted conditions (atmosphere and deposition rate) and arrangement of layers, provided cavities operating either in the visible (at ~ 670 nm) or in the near-infrared (at ~ 1560 nm) wavelength ranges. The main differential of the work relies on the construction of optical microcavities with a reduced number of periods whose main properties can be changed by thermal annealing treatments. The work also discusses the angle-dependent behavior of the optical transmission profiles as well as the use of the COMSOL software package to simulate the microcavities.