5 resultados para Nd-doped material

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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In 1603, the Italian shoemaker Vincenzo Cascariolo found that a stone (baryte) from the outskirts of Bologna emitted light in the dark without any external excitation source. However, the calcination of the baryte was needed prior to this observation. The stone later named as the Bologna Stone was among the first luminescent materials and the first documented material to show persistent luminescence. The mechanism behind the persistent emission in this material has remained a mystery ever since. In this work, the Bologna Stone (BaS) was prepared from the natural baryte (Bologna, Italy) used by Cascariolo. Its properties, e. g. impurities (dopants) and their valences, luminescence, persistent luminescence and trap structure, were compared to those of the pure BaS materials doped with different (transition) metals (Cu, Ag, Pb) known to yield strong luminescence. The work was carried out by using different methods (XANES, TL, VUV-UV-vis luminescence, TGA-DTA, XPD). A plausible mechanism for the persistent luminescence from the Bologna Stone with Cu+ as the emitting species was constructed based on the results obtained. The puzzle of the Bologna Stone can thus be considered as resolved after some 400 years of studies.

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The Er3+-Yb3+ co-doped MgAl2O4 phosphor powders have been prepared by the combustion method. The phosphor powders are well characterized by X-ray diffraction (XRD) and energy dispersive (EDX) techniques. The absorption spectrum of Er3+/Er3+-Yb3+ doped/co-doped phosphor powder has been recorded in the UV-Vis-NIR region of the electro-magnetic spectrum. The evidence for indirect pumping under 980 nm excitation of Er3+ from Yb3+ was observed in the MgAl2O4 matrix material. Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermally stimulated luminescence (TSL) process in MgAl2O4:Er3+ phosphor. Three defect centres were identified in irradiated phosphor by ESR measurements which were carried out at room temperature and these were assigned to an O- ion and F+ centres. O- ion (hole centre) appears to correlate with the low temperature TSL peak at 210 A degrees C and one of the F+ centres (electron centre) is related to the high temperature peak at 460 A degrees C.

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The use of laser light to modify the material's surface or bulk as well as to induce changes in the volume through a chemical reaction has received great attention in the last few years, due to the possibility of tailoring the material's properties aiming at technological applications. Here, we report on recent progress of microstructuring and microfabrication in polymeric materials by using femtosecond lasers. In the first part, we describe how polymeric materials' micromachining, either on the surface or bulk, can be employed to change their optical and chemical properties promising for fabricating waveguides, resonators, and self-cleaning surfaces. In the second part, we discuss how two-photon absorption polymerization can be used to fabricate active microstructures by doping the basic resin with molecules presenting biological and optical properties of interest. Such microstructures can be used to fabricate devices with applications in optics, such as microLED, waveguides, and also in medicine, such as scaffolds for tissue growth.

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—This paper presents a textile patch antenna designed for WBAN applications at 2.45 GHz ISM band. The antenna uses denim as substrate and conductive fabric for the ground plane and radiator layers. The main purpose of this paper is to analyze the influence of typical deviation of denim properties and patch radiator dimensions on the performance of the antenna. The parameters considered in the analysis are the relative permittivity and thickness of denim and the width and length of the rectangular patch radiator. The dependence of the central operation frequency of the antenna on those parameters was studied using the antenna reflection coefficient obtained from EM simulations. Rules of thumb for one-shot design were derived and applied to design a rectangular patch antenna. An antenna prototype was fabricated and measured, demonstrating a 10 dB impedance band of 4.8 % centered at 2.45 GHz, in good agreement with simulated results

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The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c-AlN) and amorphous hydrogenated silicon carbide (a-SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process.