Performance of electronic devices submitted to X-rays and high energy proton beams

In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 key X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. (C) 2011 Elsevier B.V. All rights reserved.

Cryptanalysis of an efficient three-party password-based key exchange scheme

Three-party password-authenticated key exchange (3PAKE) protocols allow entities to negotiate a secret session key with the aid of a trusted server with whom they share a human-memorable password. Recently, Lou and Huang proposed a simple 3PAKE protocol based on elliptic curve cryptography, which is claimed to be secure and to provide superior efficiency when compared with similar-purpose solutions. In this paper, however, we show that the solution is vulnerable to key-compromise impersonation and offline password guessing attacks from system insiders or outsiders, which indicates that the empirical approach used to evaluate the scheme's security is flawed. These results highlight the need of employing provable security approaches when designing and analyzing PAKE schemes. Copyright (c) 2011 John Wiley & Sons, Ltd.