Analytic perturbation theory for bound states in the transfer matrix spectrum of weakly correlated lattice ferromagnetic spin systems

We consider general d-dimensional lattice ferromagnetic spin systems with nearest neighbor interactions in the high temperature region ('beta' << 1). Each model is characterized by a single site apriori spin distribution taken to be even. We also take the parameter 'alfa' = ('S POT.4') - 3 '(S POT.2') POT.2' > 0, i.e. in the region which we call Gaussian subjugation, where ('S POT.K') denotes the kth moment of the apriori distribution. Associated with the model is a lattice quantum field theory known to contain a particle of asymptotic mass -ln 'beta' and a bound state below the two-particle threshold. We develop a 'beta' analytic perturbation theory for the binding energy of this bound state. As a key ingredient in obtaining our result we show that the Fourier transform of the two-point function is a meromorphic function, with a simple pole, in a suitable complex spectral parameter and the coefficients of its Laurent expansion are analytic in 'beta'.

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices

Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time consuming and cumbersome task. However, it is mandatory to have accurate device simulation, with good correlation with experimental results of strained devices, allowing for in-depth physical insight as well as prediction on the stress impact on the device electrical characteristics. This work proposes the use of an analytic function, based on the literature, to describe accurately the strain dependence on both channel length and fin width in order to simulate adequately strained triple-gate devices. The maximum transconductance and the threshold voltage are used as the key parameters to compare simulated and experimental data. The results show the agreement of the proposed analytic function with the experimental results. Also, an analysis on the threshold voltage variation is carried out, showing that the stress affects the dependence of the threshold voltage on the temperature. (C) 2011 Elsevier Ltd. All rights reserved.