Obtaining NiAl intermetallic compound using different milling devices

NiAl intermetallic compound was synthesized by mechanical alloying technique in planetary and attritor mills. The starting powders consisted of elemental mixtures of Ni and Al at Ni50Al50(at%) composition. In the planetary mill, compound formation occurred gradually during mechanical alloying, while the occurrence of a mechanically induced self-propagating reaction (MSR) can be suggested in the attritor mill. The NiAl obtained in both mill types was partially disordered with long-range order parameter not inferior to 0.66. Quantitative phase analysis using the Rietveld method was performed in as-milled samples, and this method was also employed to estimate changes in crystallite size and lattice strain of the NiAl produced during mechanical alloying. (C) 2011 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.

Consolidation of Bi-2223 superconducting powders by spark plasma sintering

The spark plasma sintering (SPS) technique, by using a compacting pressure of 50 MPa, was used to consolidate pre-reacted powders of Bi1.65Pb0.35Sr2Ca2Cu3O10+delta (Bi-2223). The influence of the consolidation temperature, T-D, on the structural and electrical properties has been investigated and compared with those of a reference sample synthesized by the traditional solid-state reaction method and subjected to the same compacting pressure. From the X-ray diffraction patterns, performed in both powder and pellet samples, we have found that the dominant phase is the Bi-2223 in all samples but traces of the Bi2Sr2CaCu2O8+x (Bi-2212) were identified. Their relative density were similar to 85% of the theoretical density and the temperature dependence of the electrical resistivity, rho(T), indicated that increasing T-D results in samples with low oxygen content because the SPS is performed in vacuum. Features of the rho(T) data, as the occurrence of normal-state semiconductor-like behavior of rho(T) and the double resistive superconducting transition, are consistent with samples comprised of grains with shell-core morphology in which the shell is oxygen deficient. The SPS samples also exhibited superconducting critical current density at 77 K, J(c)(77K), between 2 and 10A/cm(2), values much smaller than similar to 22A/cm(2) measured in the reference sample. Reoxygenation of the SPS samples, post-annealed in air at different temperatures and times, was found to improve their microstructural and transport properties. Besides the suppression of the Bragg peaks belonging to the Bi-2212 phase, the superconducting properties of the post-annealed samples and particularly J(c)(77K) were comparable or better than those corresponding to the reference sample. Post-annealed samples at 750 degrees C for 5min exhibited J(c)(77K) similar to 130A/cm(2) even when uniaxially pressed at only 50 MPa. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768257]

Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films

The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c-AlN) and amorphous hydrogenated silicon carbide (a-SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process.