Effect of a polymeric protective coating on optical and electrical properties of poly (p-phenylene vinylene) derivatives

The resistance to photodegradation of poly [(2-methoxy-5-n-hexyloxy)-p-phenylene vinylene] (OC1OC6-PPV) films was significantly enhanced by the use of poly(vinyl alcohol) 99% hydrolyzed as protective coating. The deposition of poly(vinyl alcohol) onto OC1OC6-PPV films did not affect the absorption and the emission spectra of the luminescent polymer. The protected film showed 5% drop on the absorbance at 500nm after 270 hours of light exposure while the unprotected film completely degraded in the same conditions. The conductivity of the protected film remained stable (around 7 × 10-10 S/m) while the value for the unprotected one dropped around two orders of magnitude after 100 hours of light exposure.

Synthesis and photovoltaic performance of a fluorene-bithiophene copolymer

We present the synthesis of a copolymer structure, poly(9,9′-n-di-hexyl-2,7-fluorene-alt-2,5- bithiophene), referred to herein as LaPPS43, and its physico-chemical characterization. Thin films of this polymer mixed with phenyl-C61-butyric acid methyl ester (PCBM) were used as the active layer in photovoltaic devices using the ITO/PEDOT:PSS/LaPPS43: PCBM/Ca/Al bulk heterojunction structure. The devices of different active layer thicknesses were electrically studied using J-V curves and the Photo-Celiv technique. The obtained results show that LaPPS43 combined with PCBM is a promising system for photovoltaic devices. Device performance is discussed in terms of the mean drift distance x for charge carriers. Photophysical data showed that the excitonic species are all localized in the aggregated forms. The mechanism of exciton formation and dissociation is also discussed.

Concentration quenching and thermal activation of the luminescence from terbium-doped a-SiC:H and c-AlN thin films

The effect of terbium (Tb) doping on the photoluminescence (PL) of crystalline aluminum nitride (c-AlN) and amorphous hydrogenated silicon carbide (a-SiC:H) thin films has been investigated for different Tb atomic concentrations. The samples were prepared by DC and RF magnetron reactive sputtering techniques covering the concentration range of Tb from 0.5 to 11 at.%. The Tb-related light emission versus the Tb concentration is reported for annealing temperatures of 450 °C, 750 °C and 1000 °C. In the low concentration region the intensity exhibits a linear increase and its slope is enhanced with the annealing temperature giving an activation energy of 0.106 eV in an Arrhenius plot. In the high concentration region an exponential decay is recorded which is almost independent on the host material, its structure and the annealing process.