Characterization of nanostructured material images using fractal descriptors

This work presents a methodology to the morphology analysis and characterization of nanostructured material images acquired from FEG-SEM (Field Emission Gun-Scanning Electron Microscopy) technique. The metrics were extracted from the image texture (mathematical surface) by the volumetric fractal descriptors, a methodology based on the Bouligand-Minkowski fractal dimension, which considers the properties of the Minkowski dilation of the surface points. An experiment with galvanostatic anodic titanium oxide samples prepared in oxalyc acid solution using different conditions of applied current, oxalyc acid concentration and solution temperature was performed. The results demonstrate that the approach is capable of characterizing complex morphology characteristics such as those present in the anodic titanium oxide.

Influence of the network modifier on the characteristics of MSnO3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process.

MHD numerical simulations of colliding winds in massive binary systems - I. Thermal versus non-thermal radio emission

In the past few decades detailed observations of radio and X-ray emission from massive binary systems revealed a whole new physics present in such systems. Both thermal and non-thermal components of this emission indicate that most of the radiation at these bands originates in shocks. O and B-type stars and WolfRayet (WR) stars present supersonic and massive winds that, when colliding, emit largely due to the freefree radiation. The non-thermal radio and X-ray emissions are due to synchrotron and inverse Compton processes, respectively. In this case, magnetic fields are expected to play an important role in the emission distribution. In the past few years the modelling of the freefree and synchrotron emissions from massive binary systems have been based on purely hydrodynamical simulations, and ad hoc assumptions regarding the distribution of magnetic energy and the field geometry. In this work we provide the first full magnetohydrodynamic numerical simulations of windwind collision in massive binary systems. We study the freefree emission characterizing its dependence on the stellar and orbital parameters. We also study self-consistently the evolution of the magnetic field at the shock region, obtaining also the synchrotron energy distribution integrated along different lines of sight. We show that the magnetic field in the shocks is larger than that obtained when the proportionality between B and the plasma density is assumed. Also, we show that the role of the synchrotron emission relative to the total radio emission has been underestimated.

Light emission and current rectification in a molecular device: Experiment and theory

We have investigated optical and transport properties of the molecular structure 2,3,4,5-tetraphenyl-1-phenylethynyl-cyclopenta-2,4-dienol experimentally and theoretically. The optical spectrum was calculated using Hartree-Fock-intermediate neglect of differential overlap-configuration interaction model. The experimental photoluminescence spectrum showed a peak around 470nm which was very well described by the modeling. Electronic transport measurements showed a diode-like effect with a strong current rectification. A phenomenological microscopic model based on non-equilibrium Green's function technique was proposed and a very good description electronic transport was obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767457]

Evaluation of the Inductive Coupling between Equivalent Emission Sources of Components

The electromagnetic interference between electronic systems or between their components influences the overall performance. It is important thus to model these interferences in order to optimize the position of the components of an electronic system. In this paper, a methodology to construct the equivalent model of magnetic field sources is proposed. It is based on the multipole expansion, and it represents the radiated emission of generic structures in a spherical reference frame. Experimental results for different kinds of sources are presented illustrating our method.

Infrared-to-visible upconversion emission in Er3+ doped TeO2-WO3-Bi2O3 glasses with silver nanoparticles

The influence of silver nanoparticles (NPs) on the frequency upconversion luminescence in Er3+ doped TeO2-WO3-Bi2O3 glasses is reported. The effect of the NPs on the Er3+ luminescence was controlled by appropriate heat-treatment of the samples. Enhancement up to 700% was obtained for the upconverted emissions at 527, 550, and 660 nm, when a laser at 980 nm is used for excitation. Since the laser frequency is far from the NPs surface plasmon resonance frequency, the luminescence enhancement is attributed to the local field increase in the proximity of the NPs and not to energy transfer from the NPs to the emitters as is usually reported. This is the first time that the effect is investigated for tellurite-tungstate-bismutate glasses and the enhancement observed is the largest reported for a tellurium oxide based glass. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754468]

Electrical characterization of poly(amide-imide) for application in organic field effect devices

The admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.

Using Equivalent Emission Sources to Evaluate the Coupling Between Components

The electromagnetic interference between the electronic systems or their components influences the performance of the systems. For that reason, it is important to model these interferences in order to optimize the position of the systems or their components. In this paper, a method is proposed to construct the equivalent emission source models of systems. The proposed method is based on the multipolar expansion by representing the radiated emission of generic structures in a spherical reference (r, theta, phi). Some results are presented illustrating our method.

Prospect on intergalactic magnetic field measurements with gamma-ray instruments

Observing high-energy gamma-rays from Active Galactic Nuclei (AGN) offers a unique potential to probe extremely tiny values of the intergalactic magnetic field (IGMF), a long standing question of astrophysics, astropa rticle physics and cosmology. Very high energy (VHE) photons from blazars propagating along the line of sight interact with the extragalactic background light (EBL) and produce e + e − pairs. Through inverse-Compton interaction, mainly on the cosmic microwave background (CMB), these pairs generate secondary GeV-TeV compo- nents accompanying the primary VHE signal. Such secondary components would be detected in the gamma-ray range as delayed “pair echos” for very weak IGMF ( B< 10 − 16 G ), while they should result in a spatially extended ga mma-ray emission around the source for higher IGMF values ( B> 10 − 16 G ). Coordinated observations with space (i.e. Fermi) and ground- based gamma-ray instruments, such as the pre sent Cherenkov experiments H.E.S.S., MAGIC and VERITAS, the future Cherenkov Telescope Array (CTA) Observatory, and the wide-field detectors such as HAWC and LHAASO, should allow to analyze and finally detect such echos, extended emission or pair halos, and to further characterize the IGMF.