Issues on the mean stress effect in fretting fatigue of a 7050-T7451 Al alloy posed by new experimental data

The aims of this work are: (i) to produce new experimental data for fretting fatigue considering the presence of a mean bulk stress and (ii) to assess two design methodologies against failure by fretting fatigue. Tests on a cylinder–flat contact configuration were conducted using a fretting apparatus mounted on a servo-hydraulic machine. The material used for both the pads and fatigue specimen was an aeronautical 7050-T7451 Al alloy. The experimental program was designed with all relevant parameters, apart from the mean bulk load (always applied before the contact loads), kept constant. The mean bulk stress varied from compressive to tensile values while maintaining a high peak pressure in order to encourage crack initiation. Two methodologies against fretting fatigue are proposed and confronted against the experimental data. The non-local stress-based methodology considers the evaluation of a critical plane fatigue criterion at the center of a process zone located beneath the contacting surfaces. The results showed that it correctly predicts crack initiation, but was not capable to provide successful prediction of the integrity of the specimens. Alternatively, we considered a crack arrest criterion which has the potential to provide a more complete description about the integrity of the specimens.

Electronic Structure Calculations in a 2D SixGe1-x Alloy Under an Applied Electric Field.

The recent advances and promises in nanoscience and nanotechnology have been focused on hexagonal materials, mainly on carbon-based nanostructures. Recently, new candidates have been raised, where the greatest efforts are devoted to a new hexagonal and buckled material made of silicon, named Silicene. This new material presents an energy gap due to spin-orbit interaction of approximately 1.5 meV, where the measurement of quantum spin Hall effect(QSHE) can be made experimentally. Some investigations also show that the QSHE in 2D low-buckled hexagonal structures of germanium is present. Since the similarities, and at the same time the differences, between Si and Ge, over the years, have motivated a lot of investigations in these materials. In this work we performed systematic investigations on the electronic structure and band topology in both ordered and disordered SixGe1-x alloys monolayer with 2D honeycomb geometry by first-principles calculations. We show that an applied electric field can tune the gap size for both alloys. However, as a function of electric field, the disordered alloy presents a W-shaped behavior, similarly to the pure Si or Ge, whereas for the ordered alloy a V-shaped behavior is observed.