Desenvolvimento de sensores de gás a partir de óxido semicondutor nanoestruturado

The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability