Semi-implicit finite strain constitutive integration and mixed strain/stress control based on intermediate configurations

A new semi-implicit stress integration algorithm for finite strain plasticity (compatible with hyperelas- ticity) is introduced. Its most distinctive feature is the use of different parameterizations of equilibrium and reference configurations. Rotation terms (nonlinear trigonometric functions) are integrated explicitly and correspond to a change in the reference configuration. In contrast, relative Green–Lagrange strains (which are quadratic in terms of displacements) represent the equilibrium configuration implicitly. In addition, the adequacy of several objective stress rates in the semi-implicit context is studied. We para- metrize both reference and equilibrium configurations, in contrast with the so-called objective stress integration algorithms which use coinciding configurations. A single constitutive framework provides quantities needed by common discretization schemes. This is computationally convenient and robust, as all elements only need to provide pre-established quantities irrespectively of the constitutive model. In this work, mixed strain/stress control is used, as well as our smoothing algorithm for the complemen- tarity condition. Exceptional time-step robustness is achieved in elasto-plastic problems: often fewer than one-tenth of the typical number of time increments can be used with a quantifiable effect in accuracy. The proposed algorithm is general: all hyperelastic models and all classical elasto-plastic models can be employed. Plane-stress, Shell and 3D examples are used to illustrate the new algorithm. Both isotropic and anisotropic behavior is presented in elasto-plastic and hyperelastic examples.

Comparison of Photovoltaic panel’s standard and simplified models

Shockley diode equation is basic for single diode model equation, which is overly used for characterizing the photovoltaic cell output and behavior. In the standard equation, it includes series resistance (Rs) and shunt resistance (Rsh) with different types of parameters. Maximum simulation and modeling work done previously, related to single diode photovoltaic cell used this equation. However, there is another form of the standard equation which has not included Series Resistance (Rs) and Shunt Resistance (Rsh) yet, as the Shunt Resistance is much bigger than the load resistance and the load resistance is much bigger than the Series Resistance. For this phenomena, very small power loss occurs within a photovoltaic cell. This research focuses on the comparison of two forms of basic Shockley diode equation. This analysis describes a deep understanding of the photovoltaic cell, as well as gives understanding about Series Resistance (Rs) and Shunt Resistance (Rsh) behavior in the Photovoltaic cell. For making estimation of a real time photovoltaic system, faster calculation is needed. The equation without Series Resistance and Shunt Resistance is appropriate for the real time environment. Error function for both Series resistance (Rs) and Shunt resistances (Rsh) have been analyzed which shows that the total system is not affected by this two parameters' behavior.