48 resultados para silicon etching
Resumo:
Radio frequency (R.F.) glow discharge polyterpenol thin films were prepared on silicon wafers and irradiated with I10+ ions to fluences of 1 × 1010 and 1 × 1012 ions/cm2. Post-irradiation characterisation of these films indicated the development of well-defined nano-scale ion entry tracks, highlighting prospective applications for ion irradiated polyterpenol thin films in a variety of membrane and nanotube-fabrication functions. Optical characterisation showed the films to be optically transparent within the visible spectrum and revealed an ability to selectively control the thin film refractive index as a function of fluence. This indicates that ion irradiation processing may be employed to produce plasma-polymer waveguides to accommodate a variety of wavelengths. XRR probing of the substrate-thin film interface revealed interfacial roughness values comparable to those obtained for the uncoated substrate's surface (i.e., both on the order of 5 Å), indicating minimal substrate etching during the plasma deposition process.
Resumo:
Silicon has demonstrated great potential as anode materials for next-generation high-energy density rechargeable lithium ion batteries. However, its poor mechanical integrity needs to be improved to achieve the required cycling stability. Nano-structured silicon has been used to prevent the mechanical failure caused by large volume expansion of silicon. Unfortunately, pristine silicon nanostructures still suffer from quick capacity decay due to several reasons, such as formation of solid electrolyte interphase, poor electrical contact and agglomeration of nanostructures. Recently, increasing attention has been paid to exploring the possibilities of hybridization with carbonaceous nanostructures to solve these problems. In this review, the recent advances in the design of carbon-silicon nanohybrid anodes and existing challenges for the development of high-performance lithium battery anodes are briefly discussed.
Resumo:
Few-layer graphene films were grown by chemical vapor deposition and transferred onto n-type crystalline silicon wafers to fabricate graphene/n-silicon Schottky barrier solar cells. In order to increase the power conversion efficiency of such cells the graphene films were doped with nitric acid vapor and an antireflection treatment was implemented to reduce the sunlight reflection on the top of the device. The doping process increased the work function of the graphene film and had a beneficial effect on its conductivity. The deposition of a double antireflection coating led to an external quantum efficiency up to 90% across the visible and near infrared region, the highest ever reported for this type of devices. The combined effect of graphene doping and antireflection treatment allowed to reach a power conversion efficiency of 8.5% exceeding the pristine (undoped and uncoated) device performance by a factor of 4. The optical properties of the antireflection coating were found to be not affected by the exposure to nitric acid vapor and to remain stable over time.