Controlled-bandgap silicon nitride nanomaterials : deterministic nitrogenation in high-density plasmas

To overcome major problems associated with insufficient incorporation of nitrogen in hydrogenated amorphous silicon nitride (a-SiNx:H) nanomaterials, which in turn impedes the development of controlled-bandgap nanodevices, here we demonstrate the possibility to achieve effective bandgap control in a broad range by using high-density inductively coupled plasmas. This achievement is related to the outstanding dissociation ability of such plasmas. It is shown that the compositional, structural, optical, and morphological properties of the synthesized a-SiNx:H nanomaterials can be effectively tailored through the manipulation of the flow rate ratio of the silane to nitrogen gases X. In particular, a wide bandgap of 5.21 eV can be uniquely achieved at a low flow rate ratio of the nitrogen to silane gas of 1.0, whereas typically used values often exceed 20.0. These results are highly-relevant to the development of the next-generation nanodevices that rely on the effective control of the functional nano-layer bandgap energies.

Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure

Structural stability, electronic, and optical properties of InN under high pressure are studied using the first-principles calculations. The lattice constants and electronic band structure are found consistent with the available experimental and theoretical values. The pressure of the wurtzite-to-rocksalt structural transition is 13.4 GPa, which is in an excellent agreement with the most recent experimental values. The optical characteristics reproduce the experimental data thus justifying the feasibility of our theoretical predictions of the optical properties of InN at high pressures.

Pulsed dc- and sine-wave-excited cold atmospheric plasma plumes: A comparative analysis

Cold atmospheric-pressure plasma plumes are generated in the ambient air by a single-electrode plasma jet device powered by pulsed dc and ac sine-wave excitation sources. Comprehensive comparisons of the plasma characteristics, including electrical properties, optical emission spectra, gas temperatures, plasma dynamics, and bacterial inactivation ability of the two plasmas are carried out. It is shown that the dc pulse excited plasma features a much larger discharge current and stronger optical emission than the sine-wave excited plasma. The gas temperature in the former discharge remains very close to the room temperature across the entire plume length; the sine-wave driven discharge also shows a uniform temperature profile, which is 20-30 degrees higher than the room temperature. The dc pulse excited plasma also shows a better performance in the inactivation of gram-positive staphylococcus aureus bacteria. These results suggest that the pulsed dc electric field is more effective for the generation of nonequilibrium atmospheric pressure plasma plumes for advanced plasma health care applications.

Enhancement of optical absorption in thin-film solar cells through the excitation of higher-order nanoparticle plasmon modes

Recent research in the rapidly emerging field of plasmonics has shown the potential to significantly enhance light trapping inside thin-film solar cells by using metallic nanoparticles. In this article it is demonstrated the plasmon enhancement of optical absorption in amorphous silicon solar cells by using silver nanoparticles. Based on the analysis of the higher-order surface plasmon modes, it is shown how spectral positions of the surface plasmons affect the plasmonic enhancement of thin-film solar cells. By using the predictive 3D modeling, we investigate the effect of the higher-order modes on that enhancement. Finally, we suggest how to maximize the light trapping and optical absorption in the thin-film cell by optimizing the nanoparticle array parameters, which in turn can be used to fine tune the corresponding surface plasmon modes.

Surface plasmon enhancement of optical absorption in thin-film silicon solar cells

Strong electromagnetic field enhancement that occurs under conditions of the surface plasmon excitation in metallic nanoparticles deposited on a semiconductor surface is a very efficient and promising tool for increasing the optical absorption within semiconductor solar cells and, hence, their photocurrent response. The enhancement of the optical absorption in thin-film silicon solar cells via the excitation of localized surface plasmons in spherical silver nanoparticles is investigated. Using the effective medium model, the effect of the nanoparticle size and the surface coverage on that enhancement is analyzed. The optimum configuration and the nanoparticle parameters leading to the maximum enhancement in the optical absorption and the photocurrent response in a single p-n junction silicon cell are obtained. The effect of coupling between the silicon layer and the surface plasmon fields on the efficiency of the above enhancement is quantified as well.

Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas

Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 °C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 °C. It is found that the variations of the crystalline fraction fc, bonded hydrogen content CH, optical bandgap ETauc, film microstructure and growth rate Rd are closely related to the substrate temperature. In particular, at a substrate temperature of 300 °C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63nms-1, a low hydrogen content of 4.0at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

On natures of sub-gap photoelectric and optical spectra in nitrogen-contaminated nanocrystalline diamond

Experimentally observed optical and photoelectrical spectra of nitrogen-contaminated (unintentionally doped) nano-crystalline CVD diamond films are simulated using semi-empirical adiabatic General Skettrup Model (GSM), which presumes dominant contributions of defect states from sp 3-coordinated intra-granular carbon atoms to intra-band single electron spectrum N(E) of the material. This picture disagrees with a common viewpoint that the N(E) spectrum of the gap states in diamond powders and polycrystalline CVD films mainly originates from π and π* bonds of sp2-coordinated carbon atoms, which are distributed nearly uniformly over outer surfaces and/or interfaces of the diamond grains. The GSM predicts as well strong effect of granular morphology on the density of intra-band defect states in polycrystalline diamonds.

Optical emission characteristics and mode transitions in low-frequency inductively coupled plasmas

An attempt was made to investigate the optical emission spectra of atomic, molecular, and ionic species in low-frequency, high-density ICP discharges in pure nitrogen, ar con gases, and gas mixtures Ar+H2, N2+Ar, and N2+H2. The excited species were identified by in situ optical emission intensity (OEI) measurements in the discharge chamber. In general, significant results were obtained.

Surface magnetoplasma waves at the interface between a plasma-like medium and a metal in the Voigt geometry

Theoretical and experimental results associated with the studies of different properties of surface-type waves (SW) in plasma-like medium-metal structures are reviewed. The propagation of surface waves in the Voigt geometry (the SW propagate across the external magnetic field, which is parallel to the interface) is considered. Various problems dealing with the linear properties of the SW (dispersion characteristics, electromagnetic fields topography, influence of the inhomogeneity of the medium, etc.); excitation mechanisms of the plasma-metal waveguide structures (parametric, drift, diffraction, etc. mechanisms); nonlinear effects associated with SW propagation (higher harmonics generation, self-interaction, nonlinear damping, nonlinear interactions, etc.) are presented. In many cases the results are valid for both gaseous and solid-state plasmas. © 1999 Elsevier Science B.V. All rights reserved.

Resonant generation of the second harmonic of a surface wave on a plasma-metal boundary

The process of resonant generation of the second harmonic of the surface wave, propagating along the external magnetic field at the plasma-metal boundary is considered. The periodic process of the energy exchange between the first and the second harmonics of the wave is investigated as well. It is shown that the process under study is periodic one. The analytical expressions are obtained and numerical estimations are presented for characteristic time of nonlinear energy exchange. The self-action effect of main frequency wave is account for harmonics interaction. It is shown that the effect leads to nonlinear phenomena attenuation, which expresses in narrowing possible value interval of harmonics amplitudes during energy exchange process and in increasing the nonlinear interaction time.

Third harmonic generation of the surface wave in the semiconductor-metal slowing-down structure

A nonlinear process is considered of the surface wave third harmonics generation in a slowing-down semiconductor-metal structure. The process is conditioned by non-parabolicity of the charge carrier dispersion law. It is shown that in narrow-gap semiconducting materials it is necessary to account for the process together with the surface wave second harmonics generation conditioned by nonlinearity of quasi-hydrodynamics and the Maxwell equations. The conclusion is made that the third harmonies amplitude in narrow-gap semiconductors may exceed substantially the signal amplitude at the 3w frequency in a gas plasma and be of the same order with the surface waves second harmonies amplitude.

Parametric excitation of high-frequency surface waves in a plasma-metal waveguide structure

The problem concerning the excitation of high-frequency surface waves (SW) propagating across an external magnetic field at a plasma-metal interface is considered. A homogeneous electric pump field is applied in the direction transverse with respect to the plasma-metal interface. Two high-frequency SW from different frequency ranges of existence and propagating in different directions are shown to be excited in this pump field. The instability threshold pump-field values and increments are obtained for different parameters of the considered waveguide structure. The results associated with saturation of the nonlinear instability due to self-interaction effects of the excited SW are given as well. The results are appropriate for both gaseous and semiconductor plasmas.

Resonant second harmonics generation of the submillimeter surface wave in the semiconductor superlattice bounded by a metal

In this study, the process of the resonant second harmonics generation of the submillimeter (SM), which is of interest for design of the semiconductor frequency multipliers is evaluated. Particularly, the possibility to use the semiconductor superlattice-metal structures as an effective second harmonics generator is demonstrated.

Modulation and control of three-phase paralleled Z-source inverters for distributed generation applications

This paper presents a modulation and controller design method for paralleled Z-source inverter systems applicable for alternative energy sources like solar cells, fuel cells, or variablespeed wind turbines with front-end diode rectifiers. A modulation scheme is designed based on simple shoot-through principle with interleaved carriers to give enhanced ripple reduction in the system. Subsequently, a control method is proposed to equalize the amount of power injected by the inverters in the grid-connected mode and also to provide reliable supply to sensitive loads onsite in the islanding mode. The modulation and controlling methods are proposed to have modular independence so that redundancy, maintainability, and improved reliability of supply can be achieved. The performance of the proposed paralleled Z-source inverter configuration is validated with simulations carried out using Matlab/Simulink/Powersim. Moreover, a prototype is built in the laboratory to obtain the experimental verifications.