3 resultados para Socioeconomic transition

em Universidade do Minho


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Dissertação de mestrado em Psicologia Aplicada

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Socioeconomic disadvantage is an important predictor of maternal harsh discipline, but few studies have examined risk mechanisms for harsh parenting within disadvantaged samples. In the present study, parenting stress, family conflict, and child difficult temperament are examined as predictors of maternal harsh discipline among a group of 58 mothers from socioeconomically disadvantaged backgrounds and their young children between the ages of 1- to 4-years-old. Maternal harsh discipline was measured using standardized observations, and mothers reported on parenting stress, family conflict, and child temperament. Severity of socioeconomic deprivation was included as a moderator in these associations. Results showed that parenting stress and family conflict predicted maternal harsh discipline, but only in the most severely deprived families. These findings extend prior research on the processes through which socioeconomic deprivation severity and family functioning impact maternal harsh discipline within a high-risk sample of low-income families. They suggest that the spillover of negative parental functioning into parent–child interactions is particularly likely under conditions of substantial socioeconomic deprivation. Severity of socioeconomic stress seems to undermine maternal adaptive forms of coping, resulting in harsh disciplining practices. Intervention efforts aimed at improving parenting and family relations, as well as an adaptive coping style assume especial relevance.

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CONSPECTUS: Two-dimensional (2D) crystals derived from transition metal dichalcogenides (TMDs) are intriguing materials that offer a unique platform to study fundamental physical phenomena as well as to explore development of novel devices. Semiconducting group 6 TMDs such as MoS2 and WSe2 are known for their large optical absorption coefficient and their potential for high efficiency photovoltaics and photodetectors. Monolayer sheets of these compounds are flexible, stretchable, and soft semiconductors with a direct band gap in contrast to their well-known bulk crystals that are rigid and hard indirect gap semiconductors. Recent intense research has been motivated by the distinct electrical, optical, and mechanical properties of these TMD crystals in the ultimate thickness regime. As a semiconductor with a band gap in the visible to near-IR frequencies, these 2D MX2 materials (M = Mo, W; X = S, Se) exhibit distinct excitonic absorption and emission features. In this Account, we discuss how optical spectroscopy of these materials allows investigation of their electronic properties and the relaxation dynamics of excitons. We first discuss the basic electronic structure of 2D TMDs highlighting the key features of the dispersion relation. With the help of theoretical calculations, we further discuss how photoluminescence energy of direct and indirect excitons provide a guide to understanding the evolution of the electronic structure as a function of the number of layers. We also highlight the behavior of the two competing conduction valleys and their role in the optical processes. Intercalation of group 6 TMDs by alkali metals results in the structural phase transformation with corresponding semiconductor-to-metal transition. Monolayer TMDs obtained by intercalation-assisted exfoliation retains the metastable metallic phase. Mild annealing, however, destabilizes the metastable phase and gradually restores the original semiconducting phase. Interestingly, the semiconducting 2H phase, metallic 1T phase, and a charge-density-wave-like 1T' phase can coexist within a single crystalline monolayer sheet. We further discuss the electronic properties of the restacked films of chemically exfoliated MoS2. Finally, we focus on the strong optical absorption and related exciton relaxation in monolayer and bilayer MX2. Monolayer MX2 absorbs as much as 30% of incident photons in the blue region of the visible light despite being atomically thin. This giant absorption is attributed to nesting of the conduction and valence bands, which leads to diversion of optical conductivity. We describe how the relaxation pathway of excitons depends strongly on the excitation energy. Excitation at the band nesting region is of unique significance because it leads to relaxation of electrons and holes with opposite momentum and spontaneous formation of indirect excitons.