7 resultados para Diode Rectifier
em Universidade do Minho
Resumo:
A new integrated mathematical model for the simulation of an offshore wind system having a rectifier input voltage malfunction at one phase is presented in this paper. The mathematical model considers an offshore variable-speed wind turbine on a floating platform, equipped with a permanent magnet synchronous generator using full-power three-level converter to inject energy into the electric network, through a high voltage direct current transmission submarine cable. The model for the drive train is a discrete three mass, incorporating the dynamic of the moving surface. A case study is presented to access conclusion about the malfunction.
Resumo:
This paper presents a model predictive current control applied to a proposed single-phase five-level active rectifier (FLAR). This current control strategy uses the discrete-time nature of the active rectifier to define its state in each sampling interval. Although the switching frequency is not constant, this current control strategy allows to follow the reference with low total harmonic distortion (THDF). The implementation of the active rectifier that was used to obtain the experimental results is described in detail along the paper, presenting the circuit topology, the principle of operation, the power theory, and the current control strategy. The experimental results confirm the robustness and good performance (with low current THDF and controlled output voltage) of the proposed single-phase FLAR operating with model predictive current control.
Resumo:
This work demonstrates the role of defects generated during rapid thermal annealing of pulsed laser deposited ZnO/Al2O3 multilayer nanostructures in presence of vacuum at different temperatures (Ta) (500–900 C) on their electrical conductance and optical characteristics. Photoluminescence (PL) emissions show the stronger green emission at Ta 600 C and violet–blue emission at TaP800 C, and are attributed to oxygen vacancies and zinc related defects (zinc vacancies and interstitials) respectively. Current–voltage (I–V) characteristics of nanostructures with rich oxygen vacancies and zinc related defects display the electroforming free resistive switching (RS) characteristics. Nanostructures with rich oxygen vacancies exhibit conventional and stable RS behavior with high and low resistance states (HRS/LRS) ratio 104 during the retention test. Besides, the dominant conduction mechanism of HRS and LRS is explained by trap-controlled-space-charge limited conduction mechanism, where the oxygen vacancies act as traps. On the other hand, nanostructures with rich zinc related defects show a diode-like RS behavior. The rectifying ratio is found to be sensitive on the zinc interstitials concentration. It is assumed that the rectifying behavior is due to the electrically formed interface layer ZnAl2O4 at the Zn defects rich ZnO crystals – Al2O3 x interface and the switching behavior is attributed to the electron trapping/de-trapping process at zinc vacancies.
Resumo:
Tese de Doutoramento em Engenharia de Materiais.
Resumo:
Tese de Doutoramento em Engenharia Eletrónica e de Computadores.
Resumo:
Tese de Doutoramento em Biologia de Plantas MAP - Bioplant
Resumo:
Dissertação de mestrado em Técnicas de Caracterização e Análise Química