Search for higgs and Z boson decays to J/ψγ and (nS)γ with the ATLAS detector

A search for the decays of the Higgs and Z bosons to J/ψγ and Υ(nS)γ (n=1,2,3) is performed with pp collision data samples corresponding to integrated luminosities of up to 20.3fb−1 collected at s√=8TeV with the ATLAS detector at the CERN Large Hadron Collider. No significant excess of events is observed above expected backgrounds and 95% CL upper limits are placed on the branching fractions. In the J/ψγ final state the limits are 1.5×10−3 and 2.6×10−6 for the Higgs and Z bosons, respectively, while in the Υ(1S,2S,3S)γ final states the limits are (1.3,1.9,1.3)×10−3 and (3.4,6.5,5.4)×10−6, respectively.

Further results on the inverse along an element in semigroups and rings

In this paper, we introduce a new notion in a semigroup $S$ as an extension of Mary's inverse. Let $a,d\in S$. An element $a$ is called left (resp. right) invertible along $d$ if there exists $b\in S$ such that $bad=d$ (resp. $dab=b$) and $b\leq_\mathcal{L}d$ (resp. $b\leq_\mathcal{R}d$). An existence criterion of this type inverse is derived. Moreover, several characterizations of left (right) regularity, left (right) $\pi$-regularity and left (right) $*$-regularity are given in a semigroup. Further, another existence criterion of this type inverse is given by means of a left (right) invertibility of certain elements in a ring. Finally we study the (left, right) inverse along a product in a ring, and, as an application, Mary's inverse along a matrix is expressed.

Gellan gum-Ionic liquid membranes for electrochromic device application

Biopolymer-based materials have been of particular interest and they are alternatives to synthetic polymers based on the decreasing oil resources. The polymer electrolytes were doped with choline-based IL N,N,Ntrimethyl- N-(2-hydroxyethyl)ammonium bis(trifluoromethylsulfonyl)imide ([N1 1 1 2(OH)][NTf2]), or Er (CF3SO3)3 or both. The polymer electrolytes were employed in the production of glass/ITO/WO3/electrolyte/ CeO2–TiO2/ITO/glass electrochromic devices (ECDs). The lowest onset temperature for the degradation of all the SPEs is at ~130 °C for the Gellan Er (CF3SO3)3 (10:1) this temperature range of stability is wide enough for a material to be applied as an electrolyte/separator component in electrochemical devices. The three ECDs displayed fast switching speed (ca. 15 s). Gellan [N1 1 1 2(OH)][NTf2] Er (CF3SO3)3 (5:1:10) exhibited an electrochromic contrast of 4.2% in the visible region, the coloration efficiency attained at 555 nm was 3.5 and 0.90 cm-2 C-1 in the “colored” and “bleached” states, respectively, and the open circuit memorywas 48 h. Preliminary tests performed with a prototype electrochromic device (ECD) incorporating WO3 as cathodic electrochromic layer, are extremely encouraging.

Search for new light gauge bosons in Higgs boson decays to four-lepton final states in pp collisions at s√=8TeV with the ATLAS detector at the LHC

This paper presents a search for Higgs bosons decaying to four leptons, either electrons or muons, via one or two light exotic gauge bosons Zd, H→ZZd→4ℓ or H→ZdZd→4ℓ. The search was performed using pp collision data corresponding to an integrated luminosity of about 20 fb−1 at the center-of-mass energy of s√=8TeV recorded with the ATLAS detector at the Large Hadron Collider. The observed data are well described by the Standard Model prediction. Upper bounds on the branching ratio of H→ZZd→4ℓ and on the kinetic mixing parameter between the Zd and the Standard Model hypercharge gauge boson are set in the range (1--9)×10−5 and (4--17)×10−2 respectively, at 95% confidence level assuming the Standard Model branching ratio of H→ZZ∗→4ℓ, for Zd masses between 15 and 55 GeV. Upper bounds on the effective mass mixing parameter between the Z and the Zd are also set using the branching ratio limits in the H→ZZd→4ℓ search, and are in the range (1.5--8.7)×10−4 for 15

Low f-number microlenses for integration on optical microsystems

This paper presents microlenses (MLs) with low f-number made of AZ4562 photoresist for integration on optical microsystems. The fabrication process was based on the thermal reflow and rehydration. Large series of MLs were fabricated with a width of 35 μm, a thickness of 5 μm, and spaced apart by 3 μm. The MLs were fabricated directly on the surface of a die with type n+/p-substrate junction photodiode fabricated in a standard CMOS process. The measured focal length was 49 μm with a tolerance of ±2 μm (maximum error of ±4%), resulting in a numerical aperture of 33.6 × 10-2 (±1.3 × 10-2). The measurements also revealed an f-number of 1.4.