Analysis methods for meso- and macroporous silicon etching baths

Analysis methods for electrochemical etching baths consisting of various concentrations of hydrofluoric acid (HF) and an additional organic surface wetting agent are presented. These electrolytes are used for the formation of meso- and macroporous silicon. Monitoring the etching bath composition requires at least one method each for the determination of the HF concentration and the organic content of the bath. However, it is a precondition that the analysis equipment withstands the aggressive HF. Titration and a fluoride ion-selective electrode are used for the determination of the HF and a cuvette test method for the analysis of the organic content, respectively. The most suitable analysis method is identified depending on the components in the electrolyte with the focus on capability of resistance against the aggressive HF.

Tomographic readout of an opto-mechanical interferometer

The quantum state of light changes its nature when being reflected off a mechanical oscillator due to the latter's susceptibility to radiation pressure. As a result, a coherent state can transform into a squeezed state and can get entangled with the motion of the oscillator. Full information of the state of light can only be gathered by a tomographic measurement. Here we demonstrate a tomographic interferometer readout by measuring arbitrary quadratures of the light field exiting a Michelson-Sagnac interferometer that contains a thermally excited high-quality silicon nitride membrane. A readout noise of 1.9 x 10(-16) mHz(-1/2) around the membrane's fundamental oscillation mode at 133 kHz has been achieved, going below the peak value of the standard quantum limit by a factor of 8.2 (9 dB). The readout noise was entirely dominated by shot noise in a rather broad frequency range around the mechanical resonance.