74 resultados para vapour polymerisation

em Indian Institute of Science - Bangalore - Índia


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Experimental results for breakdown voltage of sodium vapour measured for the first time using coaxial cylindrical electrodes of fixed gap distance (5 mm) and pressure (corrected to2 0 "C) in the range2 1 to 652 Pa are reported, and are founfdo l ltoow Paschen's Law. The investigations also reveal that V th-Ie characteristics are pressure dependent; the current during the breakdown and the buoifl dc-uurpre nt after a breakdoiws nei ther positive or negative. in spite of the central cylinder being always maintained at a positive potential

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Vapour species effusing from a magnesia Knudsen cell containing Mg-Zn alloy at 923 K were condensed on a water cooled copper plate. The equilibrium composition of the vapour phase over the alloy was determined from chemical analysis of the condensate. The activity coefficients of both components in the alloy have been derived from the data using a modified Gibbs-Duhem relation. The ratio of saturation vapour pressures of pure Zn and Mg obtained from the analysis of alloy data agree well with values from the literature, providing an internal check on the accuracy of data obtained in this study. Both components of the alloy exhibit negative deviations from Raoult's law. The concentration-concentration structure factor of Bhatia and Thomton at zero wave vector, evaluated from the measurements, indicate the presence of MgZn2 type complex in the liquid state. The associated regular solution model has been used for the thermodynamic description of liquid Mg-Zn alloys.

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Vapour phase oxidation of furfural over vanadium pentoxide catalyst was studied using an isothermal flow reactor in the temperature range of 220–280°C. Maleic anhydride and carbon dioxide are found to be formed from furfural by a parallel reaction scheme. The following rate equation based on the two-stage redox mechanism—the substance to be oxidized reduces the catalyst which in turn is reoxidized by oxygen from the feed—is found to explain the data satisfactorily.The reoxidation of the reduced catalyst was found to be the rate controlling step.

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Vapour phase oxidation of anthracene over cobalt molybdate catalyst was investigated in an isothermal flow reactor in the temperature range of 280—340°C. Fifteen different models based on redox, Langmuir—Hinshelwood and Rideal mechanisms were tested in order to elucidate the mechanism of the above reaction. These models were compared on the basis of three criteria and were finally discriminated employing the non-intrinsic parameter method. Two-stage redox mechanism was found to explain the data satisfactorily.

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Vapour phase oxidation of furfural over vanadium pentoxide catalyst was studied using an isothermal flow reactor in the temperature range of 220–280°C. Maleic anhydride and carbon dioxide are found to be formed from furfural by a parallel reaction scheme. The following rate equation based on the two-stage redox mechanism—the substance to be oxidized reduces the catalyst which in turn is reoxidized by oxygen from the feed—is found to explain the data satisfactorily. The reoxidation of the reduced catalyst was found to be the rate controlling step.

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Vapour phase oxidation of anthracene over cobalt molybdate catalyst was investigated in an isothermal flow reactor in the temperature range of 280—340°C. Fifteen different models based on redox, Langmuir—Hinshelwood and Rideal mechanisms were tested in order to elucidate the mechanism of the above reaction. These models were compared on the basis of three criteria and were finally discriminated employing the non-intrinsic parameter method. Two-stage redox mechanism was found to explain the data satisfactorily.

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Thiophosphoryl fluoride and phosphoryl fluoride have been found to initiate the polymerisation of tetrahydrofuran. The living polymer formed has a high molecular weight of the order of a million and the density is found to be between 0.98 - 1.02 g/cc. A cationic mechanism for the polymerisation has been proposed.

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The transesterification of methyl salicylate with phenol has been studied in vapour phase over solid acid catalysts such as ZrO2, MoO3 and SO42- or Mo(VI) ions modified zirconia. The catalytic materials were prepared and characterized for their total surface acidity, BET surface area and powder XRD patterns. The effect of mole-ratio of the reactants, catalyst bed temperature, catalyst weight, flow-rate of reactants, WHSV and time-on-stream on the conversion (%) of phenol and selectivity (%) of salol has been investigated. A good yield (up to 70%) of salol with 90% selectivity was observed when the reactions were carried out at a catalyst bed temperature of 200 degrees C and flow-rate of 10 mL/h in presence of Mo(VI)/ZrO2 as catalyst. The results have been interpreted based on the variation of acidic properties and powder XRD phases of zirconia on incorporation of SO42- or Mo(VI) ions. The effect of poisoning of acid sites of SO42- or Mo(VI) ions modified zirconia on total surface acidity, powder XRD phases and catalytic activity was also studied. Possible reaction mechanisms for the formation of salol and diphenyl ether over acid sites are proposed.

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The growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co3O4 on different substrates at a temperature as low as 400 degreesC by low-pressure metalorganic chemical vapour deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co3O4 films are formed on glass and Si (100) in the temperature range 400-550 degreesC. Under similar conditions of growth. highly oriented films of Co3O4 are formed on SrTiO3 (100) and LaAlO3 (100). The activation energy for the growth of polycrystalline films on glass is significantly higher than that for epitaxial growth on SrTiO3 (100). The film on LaAlO3 (100) grown at 450 degreesC shows a rocking curve FWHM of 1.61 degrees, which reduces to 1.32 degrees when it is annealed in oxygen at 725 degreesC. The film on SrTiO3 (100) has a FWHM of 0.33 degrees (as deposited) and 0.29 (after annealing at 725 degreesC). The phi -scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO3 (100) is comparable to the best of the perovskite-based oxide thin films grown at significantly higher temperatures. A plausible mechanism is proposed for the observed low temperature epitaxy. (C) 2001 Published by Elsevier Science B.V.

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The need for high purity materials for the growth of epitaxial layers of GaAs and the limitations of present source materials are discussed. A for purifying bulk quantitites of GaAs using chemical vapour transport is presented. GaAs is contained in a silica capsule which has a small orifice allow movement of gas between inside and outside. The capsule is contained in a heated tube and hydrogen chloride is used as the transporting agent. Growth rates of 0.1 g/h have been obtained and evidence for the purification is presented along with a discussion of the principles involved. The potentialities of the method for both purification and for the growth of single crystal substrate material are stressed.--AA

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The vapour pressures of barium and strontium have been measured by continuous monitoring of the weight loss of Knudsen cells in the temperature range 700�1200 K. The results for strontium agree with those reported in the literature, but the vapour pressure of barium has been found to be considerably lower than the generally accepted value. The experimentally determined pressures are in good agreement with theoretical values obtained using the Gibbs-Bogoliubov first-order variational method.