462 resultados para temperature coefficient

em Indian Institute of Science - Bangalore - Índia


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High nonlinearity coefficients of 60–150 are observed in the current‐voltage (I‐V) curves of the mixed phase ceramics formed by cosintering ZnO with spinel phases having large negative temperature coefficients (NTCs) in resistivity. The region of negative slope in the I‐V curves of the NTC ceramics is progressively made positive with ZnO phase content, wherein ZnO grains function as a built‐in resistor in series to the resistance of the NTC phase. High α depends on the optimum phase content of ZnO as much as its intrinsic conductivity. The studies indicate that the predominent contribution to power dissipation is by way of joule heating from the resistive component of the current.

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The presently developed two-stage process involves diping the prefired porous disks of n-BaTiO3 in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).

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A study of the linear electro?optic effect in single crystals of the organic compound, 4?nitro�4??methylbenzylidene aniline is reported. The reduced half?wave voltages have been found to have values 2.8, 1.3, and 1.1 kV at 632.8, 514.5, and 488.0 nm, respectively and the corresponding values of the largest linear electro?optic coefficient have been calculated. The thermal variation of the birefringence has also been investigated and the temperature variation of the refractive index difference is found to have the value, d?n/dT = 15.8 × 10?5 K?1.

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Donor-doped n-BaTiO3 polycrystalline ceramics show a strong negative temperature coefficient of resistivity below the orthorhombic-rhombohedral phase transition point, from 10(2-3) Omega cm af 190 K to 10(10-13) Omega cm at less than or similar to 50 K, with thermal coefficient of resistance alpha = 20-23% K-1. Stable thermal sensors for low-temperature applications are realized therefrom. The negative temperature coefficient of resistivity region can be modified by substituting isovalent ions in the lattice. Highly nonlinear current-voltage (I-V) curves are observed at low temperatures, with a voltage maximum followed by the negative differential resistance. The I-V curves are sensitive to dissipation so that cryogenic sensors can be fabricated for liquid level control, flow rate monitoring, radiation detection or in-rush voltage limitation.

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Donor-doped n-(Ba,Pb)TiO3 polycrystalline ceramics exhibit distinctly two-step positive temperature coefficient of resistance (PTCR) characteristics when formulated with suitable combinations of B2O3 and Al2O3 as grain boundary modifiers by heterogeneous addition. B2O3 or Al2O3 when added singularly resulted in either steep or broad PTCR jumps respectively across the phase transition. The two-step PTCR is attributed to the activation of the acceptor states, created through B2O3 and Al2O3, for various temperature regimes above the Curie point (T-c). The changing pattern of trap states is evident from the presence of Ti4+-O--Al3+ type hole centres in the grain boundary layer regions, identified in the electron paramagnetic resonance (EPR) spectra. That charge redistribution occurs among the inter-band gap defect states on crossing the Curie temperature is substantiated by the temperature coefficient in the EPR results. Capacitance-voltage results clearly show that there is an increase in the density of trap states with the addition of B2O3 and Al2O3. The spread in energy values of these trap states is evident from the large change in barrier height (phi similar or equal to 0.25-0.6 eV) between 500 and 650 K.

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The dispersion state of multiwall carbon nanotubes (MWNTs) in melt mixed polyethylene/polyethylene oxide (PE/PEO) blends has been assessed by both surface and volume electrical conductivity measurements and the structural relaxations have been assessed by broadband dielectric spectroscopy. The selective localization of MWNTs in the blends was controlled by the flow characteristics of the components, which led to their localization in the energetically less favored phase (PE). The electrical conductivity and positive temperature co-efficient (PTC) measurements were carried out on hot pressed samples. The neat blends exhibited only a negative temperature coefficient (NTC) effect while the blends with MWNTs exhibited both a PTC and a NTC at the melting temperatures of PE and PEO respectively. These phenomenal changes were corroborated with the different crystalline morphology in the blends. It was deduced that during compression molding, the more viscous PEO phase spreads less in contrast to the less viscous PE phase. This has further resulted in a gradient in morphology as well as the distribution state of the MWNTs in the samples and was supported by scanning electron and scanning acoustic microscopy (SAM) studies and contact angle measurements. SAM from different depths of the samples revealed a gradient in the microstructure in the PE/PEO blends which is contingent upon the flow characteristics of the components. Interestingly, the surface and volume electrical conductivity was different due to the different dispersion state of the MWNTs at the surface and bulk. The observed surface and volume electrical conductivity measurements were corroborated with the evolved morphology during processing. The structural relaxations in both PE and PEO were discerned from broadband dielectric spectroscopy. The segmental dynamics below and above the melting temperature of PEO were significantly different in the presence of MWNTs.

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We report the electrical conductivity between 2 and 300 K for LaNi1-xFexO3 across the composition-controlled metal-insulator (m-i) transition. Using a method first suggested by Mobius, we identify the critical concentration x(c) to be 0.3 for the m-i transition. The negative temperature coefficient of resistivity observed at low temperatures in the metallic phase follows a temperature dependence characteristic of disorder effects. The semiconducting compositions (x greater than or equal to 0.3) do not show a simple activation energy but exhibit variable-range hopping at high temperatures confirming that the m-i transition in this system is driven by increasing disorder effects.

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The temperature dependence of the dielectric constant of diamond has been measured over the temperature range 50-2OO"c. The value of E-ldc dT over this range is + 1 x 10-j. Details of the method of measuring the temperature coefficient of dielectric constant are also given. The magnitude and sign of c-ldc, dT for diamond has been theoretically calculated using Maxwell's relationship and Kramers-Heisenberg theory. The agreement between theoretical and experimental values is extremely good.

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A 35Cl NQR study of 2-chloro-3-pyridinol showed the presence of four NQR signals at 77 K. One of the lines showed a positive temperature coefficient of the NQR frequency. 1H NMR studies showed the presence of intramolecular hydrogen bonding, and the anomalous NQR temperature dependence has been explained in terms of Bayer and hydrogen bond effects. The room temperature x-ray structure and the low-temperature NQR data suggest the presence of a phase transition.

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Electrical resistivity of bulk amorphous Al23T77 samples has been studied as a function of pressure (up to 80 kbar) and temperature (down to 77 K). At atmospheric pressure the temperature dependence of resistivity obeys the relation = π0 exp(δE/RT) with two activation energies. In the temperature range 300 K T > 234 K the activation energy is 0.58 eV and for 234 >T 185 K the value is δE = 0.30 ev. The activation energy has been measured as a function of pressure. The electrical resistivity decreases exponentially with the increase of pressure and at 70 kbar pressure the electrical behaviour of the sample shows a metallic nature with a positive temperature coefficient. The high pressure phase of the sample is found to be a crystalline hexagonal phase.

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N.q.r. in sodium chloroacetate has been investigated at temperatures from 77 K to room temperature (c.300 K). A single line has been observed throughout this temperature range. Torsional frequencies of the molecule have been calculated in the above temperature range from Bayer's theory. Also the temperature coefficient of the torsional frequencies has been calculated by Brown's method.

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The ipso/cine ratio in the amination of 5-bromo-2,3-benzo- or 2-bromo-4,5-benzotropone shows a dependence upon the temperature at which the reaction is conducted, changing in favour of the ipso-product when the temperature is maintained high, ruling out an aryne-type mechanism. A comparison of independent mechanisms envisaged for the formation of the two isomeric products suggests a two-part reason: (i) at a higher reaction temperature, C-protonation, a step necessary for the formation of the cine-product, could be retarded when a direct internal mode is interfered with by a less efficient external one, and (ii) reketonisation by elimination of bromide, needed to form the ipso-product, is likely to have a high temperature coefficient enabling the rate of its formation to overtake that of the cine-product.

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Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.

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The temperature (300-973K) and frequency (100Hz-10MHz) response of the dielectric and impedance characteristics of 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) glasses and glass nanocrystal composites were studied. The dielectric constant of the glass was found to be almost independent of frequency (100Hz-10MHz) and temperature (300-600K). The temperature coefficient of dielectric constant was 8 +/- 3ppm/K in the 300-600K temperature range. The relaxation and conduction phenomena were rationalized using modulus formalism and universal AC conductivity exponential power law, respectively. The observed relaxation behavior was found to be thermally activated. The complex impedance data were fitted using the least square method. Dispersion of Barium Sodium Niobate (BNN) phase at nanoscale in a glass matrix resulted in the formation of space charge around crystal-glass interface, leading to a high value of effective dielectric constant especially for the samples heat-treated at higher temperatures. The fabricated glass nanocrystal composites exhibited P versus E hysteresis loops at room temperature and the remnant polarization (P-r) increased with the increase in crystallite size.

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Recently, a lot of interest has been centred on the optical properties of hexagonal boron nitride (h-BN), which has a similar lattice structure to graphene. Interestingly, h-BN has a wide bandgap and is biocompatible, so it has potential applications in multiphoton bioimaging, if it can exhibit large nonlinear optical (NLO) properties. However, extensive investigation into the NLO properties of h-BN have not been done so far. Here, NLO properties of 2D h-BN nanosheets (BNNS) are reported for the first time, using 1064-nm NIR laser radiation with a pulse duration of 10 ns using the Z-scan technique. The reverse saturable absorption occurs in aqueous colloidal solutions of BNNS with a very large two-photon absorption cross section (sigma(2PA)) of approximate to 57 x 10(-46) cm(4) s(-1) photon(-1). Also, by using UV-Vis absorption spectroscopy, the temperature coefficient of the bandgap (dE(g)/dT) of BNNS is determined to be 5.9 meV K-1. Further defect-induced photoluminescence emission in the UV region is obtained in the 283-303 K temperature range, under excitations of different wavelengths. The present report of large sigma(2PA) combined with stability and biocompatibility could open up new possibilities for the application of BNNS as a potential optical material for multiphoton bioimaging and advanced photonic devices.