44 resultados para photon counting detector

em Indian Institute of Science - Bangalore - Índia


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Efficient photon detection in gaseous photomultipliers require maximum photoelectron yield from the photocathode surface and also detection of them. In this work we have investigated the parameters that affect the photoelectron yield from the photocathode surface and methods to improve them thus ensuring high detection efficiency of the gaseous photomultiplier. The parameters studied are the electric field at the photocathode surface, surface properties of photocathode and pressure of gas mixture inside the gaseous photomultiplier. It was observed that optimized electric field at the photocathode ensures high detection efficiency. Lower pressure of filled gas increases the photoelectron yield from the photocathode surface but reduces the focusing probability of electrons inside the electron multiplier. Also evacuation for longer duration before gas filling increases the photoelectron yield.

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The detection efficiency of a gaseous photomultiplier depends on the photocathode quantum efficiency and the extraction efficiency of photoelectrons into the gas. In this paper we have studied the performance of an UV photon detector with P10 gas in which the extraction efficiency can reach values near to those in vacuum operated devices. Simulations have been done to compare the percentage of photoelectrons backscattered in P10 gas as well as in the widely used neon-based gas mixture. The performance study has been carried out using a single stage thick gas electron multiplier (THGEM). The electron pulses and electron spectrum are recorded under various operating conditions. Secondary effects prevailing in UV photon detectors like photon feedback are discussed and its effect on the electron spectrum under different operating conditions is analyzed. (C) 2014 Chinese Laser Press

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The design of present generation uncooled Hg1-xCdxTe infrared photon detectors relies on complex heterostructures with a basic unit cell of type (n) under bar (+)/pi/(p) under bar (+). We present an analysis of double barrier (n) under bar (+)/pi/(p) under bar (+) mid wave infrared (x = 0.3) HgCdTe detector for near room temperature operation using numerical computations. The present work proposes an accurate and generalized methodology in terms of the device design, material properties, and operation temperature to study the effects of position dependence of carrier concentration, electrostatic potential, and generation-recombination (g-r) rates on detector performance. Position dependent profiles of electrostatic potential, carrier concentration, and g-r rates were simulated numerically. Performance of detector was studied as function of doping concentration of absorber and contact layers, width of both layers and minority carrier lifetime. Responsivity similar to 0.38 A W-1, noise current similar to 6 x 10(-14) A/Hz(1/2) and D* similar to 3.1 x 10(10)cm Hz(1/2) W-1 at 0.1 V reverse bias have been calculated using optimized values of doping concentration, absorber width and carrier lifetime. The suitability of the method has been illustrated by demonstrating the feasibility of achieving the optimum device performance by carefully selecting the device design and other parameters. (C) 2010 American Institute of Physics. doi:10.1063/1.3463379]

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CsI can be used as a photocathode material in UV photon detectors. The detection efficiency of the detector strongly depends on the photoemission property of the photocathode. CsI is very hygroscopic in nature. This limits the photoelectron yield from the photocathode when exposed to humid air even for a short duration during photocathode mounting or transfer. We report here on the improvement of photoemission properties of both thick (300 nm) and thin (30 nm) UV-sensitive CsI film exposed to humid air by the process of vacuum treatment. (C) 2013 Optical Society of America

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A new method of sensing the abnormal output voltage conditions of a single phase UPS system is presented, which provides the information almost instantaneously, so that a fast load transfer can be initiated. A continuous monitoring of the UPS output instantaneous voltage is used so that any under/over voltage, transients, or waveform distortion present can be detected.

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The earlier work on the possibility of interband electron pairing in the presence of a strong radiation field has been further extended. Some additional terms, neglected earlier, have been taken into account and generalized to a situation where the electron-phonon coupling coefficients for the two conduction bands (valleys) are different. It is found that the pairing interaction is attractive and the strength depends on the photon density.

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The discharge pulse rates at different magnitude levels are often used as criteria for monitoring the partial-discharge aging of insulation systems. Use of suggested corrections for errors in cumulative probability counting leads to better use of available counters.

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We have studied the nonlinear optical properties of nanolayered Se/As2S3 film with a modulation period of 10 nm and a total thickness of 1.15 mu m at two [1064 nm (8 ns) and 800 nm (20 ps)] wavelengths using the standard Z-scan technique. Three-photon absorption was observed at off-resonant excitation and saturation of two-photon absorption at quasiresonant excitation. The observation of the saturation of two-photon absorption is because the pulse duration is shorter than the thermalization time of the photocreated carriers in their bands and three-photon absorption is due to high excitation irradiance. (c) 2007 American Institute of Physics.

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In this paper we introduce a nonlinear detector based on the phenomenon of suprathreshold stochastic resonance (SSR). We first present a model (an array of 1-bit quantizers) that demonstrates the SSR phenomenon. We then use this as a pre-processor to the conventional matched filter. We employ the Neyman-Pearson(NP) detection strategy and compare the performances of the matched filter, the SSR-based detector and the optimal detector. Although the proposed detector is non-optimal, for non-Gaussian noises with heavy tails (leptokurtic) it shows better performance than the matched filter. In situations where the noise is known to be leptokurtic without the availability of the exact knowledge of its distribution, the proposed detector turns out to be a better choice than the matched filter.

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We study the photon-number distribution in squeezed states of a single-mode radiation field. A U(l)-invariant squeezing criterion is compared and contrasted with a more restrictive criterion, with the help of suggestive geometric representations. The U(l) invariance of the photon-number distribution in a squeezed coherent state, with arbitrary complex squeeze and displacement parameters, is explicitly demonstrated. The behavior of the photon-number distribution for a representative value of the displacement and various values of the squeeze parameter is numerically investigated. A new kind of giant oscillation riding as an envelope over more rapid oscillations in this distribution is demonstrated.

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An adaptive regularization algorithm that combines elementwise photon absorption and data misfit is proposed to stabilize the non-linear ill-posed inverse problem. The diffuse photon distribution is low near the target compared to the normal region. A Hessian is proposed based on light and tissue interaction, and is estimated using adjoint method by distributing the sources inside the discretized domain. As iteration progresses, the photon absorption near the inhomogeneity becomes high and carries more weightage to the regularization matrix. The domain's interior photon absorption and misfit based adaptive regularization method improves quality of the reconstructed Diffuse Optical Tomographic images.

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We introduce the inverse annihilation and creation operators a-1 and a(dagger-1) by their actions on the number states. We show that the squeezed vacuum exp(1/2xia(dagger2)]\0] and squeezed first number state exp[1.2xia(dagger2)]\n = 1] are respectively the eigenstates of the operators (a(dagger-1)a) and (aa(dagger-1)) with the eigenvalue xi.

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We introduce the inverse of the Hermitian operator (acircacirc†) and express the Boson inverse operators acirc-1 and acirc†-1 in terms of the operators acirc, acirc† and (acircacirc†)-1. We show that these Boson inverse operators may be realized by Susskind-Glogower phase operators. In this way, we find a new two-photon annihilation operator and denote it as acirc2(acircacirc†)-1. We show that the eigenstates of this operator have interesting non-classical properties. We find that the eigenstates of the operators (acircacirc†)-1 acirc2, acirc(acircacirc†)-1 acirc and acirc2(acircacirc†)-1 have many similar properties and thus they constitute a family of two-photon annihilation operators.