Low threshold ovonic switching in a-Si:H/InSb heterostructures

a-Si:H/InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows interesting switching properties, toggling between a high resistance and a conducting state with OFF to ON resistance ratio of 10(6) at remarkably low threshold voltages of 0.3 V at room temperature. The low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, has been achieved by the use of InSb as a substrate, capable of high carrier injection. (C) 1997 Published by Elsevier Science Ltd.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

High emission currents and low threshold fields in multi-wall carbon nanotube-polymer composites in the vertical configuration

In this work, we present field emission characteristics of multi-wall carbon nanotube (MWCNT)-polystyrene composites at various weight fractions along the cross-section of sample. Scanning electron microscope images in cross-sectional view reveal that MWCNTs are homogeneously distributed across the thickness and the density of protruding tubes can be scaled with weight fraction of the composite film. Field emission from composites has been observed to vary considerably with density of MWCNTs in the polymer matrix. High current density of 100 mA/cm(2) was achieved at a field of 2.2 V/lm for 0.15 weight fraction. The field emission is observed to follow the Fowler-Nordheim tunneling mechanism, however, electrostatic screening is observed to play a role in limiting the current density at higher weight fractions. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685754]

Low Threshold Quantum Dot Lasers

Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. Despite their overall successes as emitters, their impact as laser materials has been severely limited. Eliciting stimulated emission from quantum dots requires excitation by intense short pulses of light typically generated using other lasers. In this Letter, we develop a new class of quantum dots that exhibit gain under conditions of extremely low levels of continuous wave illumination. We observe thresholds as low as 74 mW/cm(2) in lasers made from these materials. Due to their strong optical absorption as well as low lasing threshold, these materials could possibly convert light from diffuse, polychromatic sources into a laser beam.

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]

Carbon nanotube mat as substrate for ZnO nanotip field emitters

We have reported the synthesis of ZnO nanotips on a multi walled carbon nanotube (MWCNT) mat by a vapour transport process. This combination of ZnO nanotips and a MWCNT mat exhibit ideal field emission behaviour. The turn on field and threshold field is found to be 0.34 and 1.5 V mu m(-1), respectively. The low threshold field is due to the good adherence of the ZnO nanotips on the MWCNT mat. The field enhancement factor is found to be 5 x 10(2) which is in agreement with the intrinsic field emission factor of ZnO nanotips. The emission current is found to be highly stable even at moderate vacuum.

The effect of crack closure on the grain size dependence of fatigue crack growth threshold

Recent studies (I-7) clearly indicate a strong dependence of fatigue threshold parameter, A K on grain size in several alloy systems. Attempts to explain these observations on the basis of crat~tortuosity (1,8), fracture surface roughness (5,9) and crack closure (6) appear to present a fairly clear picture of the mechanisms that cause a reduction in crack growth rates at threshold. In general, it has been shown that coarse grained microstructures exhibit higher fatigue threshold in low carbon steels (1,5) aluminium alloys (7) and titanium alloys (6). In spite of these observations, there exists (10-1#) considerable uncertainity about the manner in which the AK~L depends on prior austenitic grain size in quenched and tempered steels. Studies in quenched and tempered steels demonstrating both an increase (3,12,14) as well as a decrease (11,12) in AKth with an increase in prior austenitic grain size can be sought to illustrate this point. Occasionally , the absence of any sensitivity of AKth to the variations in prior austenitJc grain size has also been reported (11,13). While a few investigators (5-7) comfortably rationalised the grain size effects on AK~L on the basis of crack closure by a comparison in terms of the closure-free component of the thresho~Ifc~, AK -f such an approach has yet to be extended to high strength steels, An attempt has been made in t~et ,pthrg sent study to explai. n the effect of pri, or austeniti.c grain size on &Kth on the basis of crack closure measurements in a high strength steel.

Low Complexity LID using Pruned Pattern Tables of LZW

We present two discriminative language modelling techniques for Lempel-Ziv-Welch (LZW) based LID system. The previous approach to LID using LZW algorithm was to directly use the LZW pattern tables forlanguage modelling. But, since the patterns in a language pattern table are shared by other language pattern tables, confusability prevailed in the LID task. For overcoming this, we present two pruning techniques (i) Language Specific (LS-LZW)-in which patterns common to more than one pattern table are removed. (ii) Length-Frequency product based (LF-LZW)-in which patterns having their length-frequency product below a threshold are removed. These approaches reduce the classification score (Compression Ratio [LZW-CR] or the weighted discriminant score [LZW-WDS]) for non native languages and increases the LID performance considerably. Also the memory and computational requirements of these techniques are much less compared to basic LZW techniques.

Charge transport in a Tomonaga-Luttinger liquid: Effects of pumping and bias

We study the current produced in a Tomonaga-Luttinger liquid by an applied bias and by weak, pointlike impurity potentials which are oscillating in time. We use bosonization to perturbatively calculate the current up to second order in the impurity potentials. In the regime of small bias and low pumping frequency, both the dc and ac components of the current have power-law dependences on the bias and pumping frequencies with an exponent 2K-1 for spinless electrons, where K is the interaction parameter. For K < 1/2, the current grows large for special values of the bias. For noninteracting electrons with K=1, our results agree with those obtained using Floquet scattering theory for Dirac fermions. We also discuss the cases of extended impurities and of spin-1/2 electrons.

Selection of intrusion detection system threshold bounds for effective sensor fusion

The motivation behind the fusion of Intrusion Detection Systems was the realization that with the increasing traffic and increasing complexity of attacks, none of the present day stand-alone Intrusion Detection Systems can meet the high demand for a very high detection rate and an extremely low false positive rate. Multi-sensor fusion can be used to meet these requirements by a refinement of the combined response of different Intrusion Detection Systems. In this paper, we show the design technique of sensor fusion to best utilize the useful response from multiple sensors by an appropriate adjustment of the fusion threshold. The threshold is generally chosen according to the past experiences or by an expert system. In this paper, we show that the choice of the threshold bounds according to the Chebyshev inequality principle performs better. This approach also helps to solve the problem of scalability and has the advantage of failsafe capability. This paper theoretically models the fusion of Intrusion Detection Systems for the purpose of proving the improvement in performance, supplemented with the empirical evaluation. The combination of complementary sensors is shown to detect more attacks than the individual components. Since the individual sensors chosen detect sufficiently different attacks, their result can be merged for improved performance. The combination is done in different ways like (i) taking all the alarms from each system and avoiding duplications, (ii) taking alarms from each system by fixing threshold bounds, and (iii) rule-based fusion with a priori knowledge of the individual sensor performance. A number of evaluation metrics are used, and the results indicate that there is an overall enhancement in the performance of the combined detector using sensor fusion incorporating the threshold bounds and significantly better performance using simple rule-based fusion.

Unusual metallic-like transport near the percolation threshold

In multiwall carbon nanotube (MWNT)-polystyrene (PS) composites, a weak temperature dependence of conductivity has been observed at a percolation threshold of 0.4 wt %. The power law [sigma(T)proportional to T-0.3] behavior indicates metallic-like behavior, unlike the usual activated transport for systems near the percolation threshold. The low field positive magnetoconductance follows H-2 dependence, due to the weak localization in disordered metallic systems. The marginal metallic nature of MWNT-PS at percolation threshold is further verified from the negligible frequency dependence of conductivity, in the temperature range of 300 to 5 K. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455895]

Micromechanics Of Fatigue Crack-Growth At Low Stress Intensities In A High-Strength Steel

An attempt to systematically investigate the effects of microstructural parameters in influencing the resistance to fatigue crack growth (FCG) in the near-threshold region under three different temper levels has been made for a high strength low alloy steel to observe in general, widely different trends in the dependence of both the total threshold stress intensity range, DELTA-K(th) and the intrinsic or effective threshold stress intensity range, DELTA-K(eff-th) on the prior austenitic grain size (PAGS). While a low strain hardening microstructure obtained by tempering at high temperatures exhibited strong dependence of DELTA-K(th) on the PAGS by virtue of strong interactions of crack tip slip with the grain boundary, a high strength, high strain hardening microstructure as a result of tempering at low temperature exhibited a weak dependence. The lack of a systematic variation of the near-threshold parameters with respect to grain size in temper embrittled structures appears to be related to the wide variations in the amount of intergranular fracture near threshold. Crack closure, to some extent provides a basis on which the increases in DELTA-K(th) at larger grain sizes can be rationalised. This study, in addition, provides a wide perspective on the relative roles of slip behaviour embrittlement and environment that result in the different trends observed in the grain size dependence of near-threshold fatigue parameters, based on which the inconsistency in the results reported in the literature can be clearly understood. Assessment of fracture modes through extensive fractography revealed that prior austenitic grain boundaries are effective barriers to cyclic crack growth compared to martensitic packet boundaries, especially at low stress intensities. Fracture morphologies comprising of low energy flat transgranular fracture can occur close to threshold depending on the combinations of strain hardening behaviour, yield strength and embrittlement effects. A detailed consideration is given to the discussion of cyclic stress strain behaviour, embrittlement and environmental effects and the implications of these phenomena on the crack growth behaviour near threshold.

Peristaltic pumping in a circular tube in the presence of an eccentric catheter

The influence of an eccentrically inserted catheter on the peristaltic pumping in a tube is investigated under long wavelength, low Reynolds number assumptions. The radially asymmetric deformation of the wall arising through an eccentrically inserted catheter is taken into consideration by choosing an appropriate bipolar coordinate system. The effect of the position and size of the catheter on pumping characteristics is studied. The best performance of pumping is noticed at a certain position of the catheter. The size of the catheter, when placed eccentrically, alters the pressure signature significantly inside the bolus, unlike the concentric case discussed by Lykoudis and Roos (1971). Further, the maximum pressure rise in one period of the peristaltic wave is observed to decrease with an increase in the eccentricity.

In-situ power monitoring scheme and its application in dynamic voltage and threshold scaling for digital CMOS integrated circuits

An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.